Carbon in silicon: Properties and impact on devices

Kolbesen, Bernd O.; Mühlbauer, A.

doi:10.1016/0038-1101(82)90206-4

Cited by 137 publications

(42 citation statements)

References 27 publications

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“…The typical concentrations of carbon in CZ or FZ Si ranges from 10 15 cm -3 to 5x10 16 cm -3 , but can reach up to 10 18 cm -3 in deliberately grown C-rich crystals [2] using CZ or FZ methods. By MBE growth, metastable concentrations C S up to ~10 21 cm -3 can be reached.…”

Section: Precipitation Behaviormentioning

confidence: 99%

“…It was also noticed that carbon facilitated oxygen precipitation, which had become important for intrinsic gettering purposes. Overall carbon was well investigated and fairly well understood since the middle of the 1980s [1][2][3]. It was concluded that carbon was a fairly benign impurity which was not really damaging for device processing but did not offer any specific advantages either.…”

Section: Introductionmentioning

confidence: 99%

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Diffusion Engineering by Carbon in Silicon

et al. 2000

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The possibility to suppress undesirable diffusion of the base dopant boron in siliconbased bipolar transistor structures by the incorporation of a high concentration of carbon has lead to renewed interest in the behavior of carbon in crystalline silicon. The present paper will review essential features of carbon in silicon including solubility, diffusion mechanisms and precipitation behavior. Based on this information the possibilities to use carbon to influence diffusion of dopants in silicon by the introduction of non-equilibrium concentrations of intrinsic point defects will be discussed as well as the reason for the relatively high resilience against carbon precipitation. Interactions between carbon and oxygen will be mentioned, especially in the context of an as yet unexplained fast out-diffusion of carbon close to the surface.

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Section: Precipitation Behaviormentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Diffusion Engineering by Carbon in Silicon

et al. 2000

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“…Durand and Duby 16) selected the carbon solubilities in solid and liquid silicon from the literatures, and the value of k C was evaluated to be 0.034 at the melting point of silicon. Other three research groups [13][14][15] experimentally measured the carbon contents in the silicon after zone melting, and the values of k C were reported in the range between 0.058 and 0.1. Since the zone melting is a dynamic process, it may be difficult to achieve the equilibrium distribution between crystal and melt especially at high temperatures, even if the zone traveling velocity is extrapolated to zero.…”

Section: Equilibrium Distribution Coefficient Of Oxygen Andmentioning

confidence: 99%

“…Since the zone melting is a dynamic process, it may be difficult to achieve the equilibrium distribution between crystal and melt especially at high temperatures, even if the zone traveling velocity is extrapolated to zero. 14,15) In addition, it was reported that carbon content in silicon was affected by the ambient atmosphere during the zone melting process.…”

Section: Equilibrium Distribution Coefficient Of Oxygen Andmentioning

confidence: 99%

“…The reported equilibrium distribution coefficients of oxygen ranged widely from 0.2 to 1.25, [4][5][6][7][8][9][10][11][12] and the values of the equilibrium distribution coefficient of carbon were reported to be less than 0.1. [13][14][15][16] The crystal-growthrelated techniques, such as the zone melting process and the CZ process, were employed to prepare the specimens for oxygen or carbon analysis in the experimental studies on the distribution. [5][6][7][8][9][10][11]14) The equilibrium distribution of oxygen or carbon between crystal and melt has been assumed in these studies.…”

Section: Introductionmentioning

confidence: 99%

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Solubilities and Equilibrium Distribution Coefficients of Oxygen and Carbon in Silicon

et al. 2002

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Solubilities of oxygen and carbon in solid silicon at 1673 K were determined by using a chemical equilibrium technique. Solid silicon was heated at 1673 K in an oxygen atmosphere for 1800 ks, and then oxygen content in the solid silicon equilibrated with silica was measured by the inert gas fusion-IR absorption method. Carbon content in the solid silicon equilibrated with silicon carbide after heating at 1673 K in an Ar-5%CO atmosphere for 4860 ks was measured by the combustion-IR absorption method. Comparing these solubility values in solid silicon with those in liquid silicon that were previously reported by the present authors, the equilibrium distribution coefficients of oxygen and carbon in silicon at the melting point were evaluated to be 0.85 ± 0.08 and 0.30 ± 0.16, respectively.

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Physical Model of Paths of Microdefects Nucleation in Dislocation-Free Single Crystals Float-Zone Silicon

Talanin

Levinson

2002

Cryst. Res. Technol.

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With the help of selective etching, transmission electron microscopy complex researches of non‐doped dislocation‐free single crystals of float‐zone silicon by a diameter of 30 mm were conducted. The crystals were obtained with various growth rates and were subjected to various kinds of technological effects. Is established that the process of microdefects formation in silicon proceeds simultaneously on two independent mechanisms:vacancy and interstitial. The physical model of formation of microdefects in dislocation‐free monocrystals of FZ silicon is offered.

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Carbon in silicon: Properties and impact on devices

Cited by 137 publications

References 27 publications

Diffusion Engineering by Carbon in Silicon

Diffusion Engineering by Carbon in Silicon

Solubilities and Equilibrium Distribution Coefficients of Oxygen and Carbon in Silicon

Physical Model of Paths of Microdefects Nucleation in Dislocation-Free Single Crystals Float-Zone Silicon

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