Physical Model of Paths of Microdefects Nucleation in Dislocation-Free Single Crystals Float-Zone Silicon

Talanin, V. I.; Talanin, I. E.; Levinson, D I

doi:10.1002/1521-4079(200209)37:9<983::aid-crat983>3.0.co;2-n

Cited by 8 publications

(6 citation statements)

References 75 publications

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“…We are entered the name (I+V)-microdefects (V.I. Talanin et al, 2002aTalanin et al, , 2002b. These research allowed to establish the physical nature of A-microdefects, B-microdefects, C-microdefects, D-microdefects and (I+V)-microdefects.…”

Section: Classification Of Grown-in Microdefectssupporting

confidence: 70%

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The Diffusion Model of Grown-In Microdefects Formation During Crystallization of Dislocation-Free Silicon Single Crystals

Talanin¹,

Talanin²

2012

Advances in Crystallization Processes

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Advances in Crystallization Processes 612 microvoids as a result of aggregation of vacancies (Goethem et al., 2008;Kulkarni, 2008a). In this physical model, the interaction between the impurities and intrinsic point defects is not considered (Kulkarni et. al., 2004). R e c e n t v e r s i o n s o f t h i s m o d e l h a v e s u g g e s t e d t h a t p a r t o f t h e v a c a n c i e s ( v ) i n t h e temperature range 1683 ... 1373 K, due to the interaction with oxygen (O) and nitrogen (N) impurities, are bound into complexes of the vO, vO 2 , and vN types (Kulkarni 2007;2008b). After the formation of microvoids, the aforementioned complexes grow and take up vacancies. This model has ignored the growth of the complexes by means of the injection of intrinsic interstitial silicon atoms and the interaction of an impurity with intrinsic interstitial silicon atoms (Kulkarni 2007;2008b).In the general case recombination-diffusion model assumes that the process of defect formation in dislocation-free silicon single crystals occurs in four stages: (i) fast recombination of intrinsic point defects near the crystallization front; (ii) the formation in the narrow temperature range 1423...1223 K depending on the value of V g /G microvoids or interstitial dislocation loops; (iii) the formation of oxygen clusters in the temperature range 1223...1023 K; (iv) growth of precipitates as a result of subsequent heat treatments.Recombination-diffusion model is the physical basis for models of the dynamics of point defects. The mathematical model of point defect dynamics in silicon quantitatively explains the homogeneous mechanism of formation of microvoids and dislocation loops. It should be noted that, in the general case, the model of point defect dynamics includes three approximations: rigorous, simplified, and discrete-continuum approaches (Sinno, 1999;Dornberger et. al., 2001;Wang & Brown, 2001;Kulkarni et. al., 2004;Kulkarni, 2005;Prostomolotov & Verezub, 2009). The rigorous model requires the solution to integrodifferential equations for point defect concentration fields, and the distribution of grown-in microdefects in this model is a function of the coordinates, the time, and the time of evolution of the size distribution of microdefects. A high consumption of time and cost for the performance of calculations required the development of a simplified model in which the average defect radius is approximated by the square root of the average defect area. This approximation is taken into account in the additional variable, which is proportional to the total area of the defect surface. The simplified model is effective for calculating the twodimensional distribution of grown-in microdefects. Both models use the classical nucleation theory and suggest the calculation of the formation of stable nuclei and the kinetics of diffusion-limited growth of defects. The discrete-continuum approximation suggests a complex approach: the solution to discrete equations for the smallest defects and the solution to the Fokker-Planck equation for...

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Section: Classification Of Grown-in Microdefectssupporting

confidence: 70%

“…This assumption was confirmed in several experimental works (Talanin et al, 2002a;Talanin et al, 2002b;Talanin et al, 2003). In paper (V.I.…”

Section: The Diffusion Model For Formation Of Grown-in Microdefects Imentioning

confidence: 99%

The Diffusion Model of Grown-In Microdefects Formation During Crystallization of Dislocation-Free Silicon Single Crystals

Talanin¹,

Talanin²

2012

Advances in Crystallization Processes

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“…The barrier is decreased if the temperature is lowered and disappears at low temperatures. Thus, the disintegration of over-saturated solid solutions of native point defects proceeds simultaneously on two mechanisms: vacancy and interstitial [52,90].…”

Section: The Mechanism Of Microdefect Formationmentioning

confidence: 99%

Physics of the formation of microdefects in dislocation-free monocrystals of float-zone silicon

Talanin¹,

Talanin²,

Levinson³

2002

Semicond. Sci. Technol.

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We study non-doped dislocation-free monocrystals of float-zone silicon using transmission electronic microscopy, optical microscopy and x-ray topography. The crystals were obtained with various growth rates (1-9 mm min −1 ) and were subjected to various kinds of thermal processing. We experimentally determine the temperatures at which microdefects of various types form, and we establish the mechanism of transformation of interstitial microdefects. On the basis of data in the literature and new results obtained by authors, we establish that the formation of microdefects in silicon occurs on two independent mechanisms: vacancy and interstitial. As a result of both these mechanisms, D-microdefects will be formed as interstitials agglomerate. We suggest that the critical parameter V /G = C crit describes the conditions of emerging (vanishing) vacancy microdefects. On the basis of these results, we suggest a physical model of the formation of microdefects in dislocation-free monocrystals of float-zone silicon, and we discuss other known models.

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“…From our viewpoint, the experiments with high pure FZ-Si are of especial importance. These were the experiments that allowed us to suggest the heterogeneous formation mechanism of grown-in microdefects [16]. Its basic principles can be outlined as follows:…”

Section: Discussionmentioning

confidence: 99%

“…3. The defect-free area between the interstitial and vacancy-interstitial regions of crystal growth was found to contain defects of interstitial-type [16]. This was clarified using TEM; methods of preferential etching or Xray topography do not reveal these defects.…”

Section: ) For Fz-si [1316]mentioning

confidence: 91%

Classification of microdefects in semiconducting silicon

Talanin¹

2003

Semicond. Phys. Quantum Electron. Optoelectron.

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On the basis of experimental analysis (preferential etching, transmission electron microscopy) of the dislocation-free silicon single crystals grown by floating-zone method (FZ-Si) and Czochralski method (Cz-Si), a classification of grown-in microdefects was compiled. The suggested classification is founded on the heterogeneous formation mechanism of grown-in microdefects, which was justified earlier by us. The suggested classification is valid for crystals of either small or large diameter.

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Physical Model of Paths of Microdefects Nucleation in Dislocation-Free Single Crystals Float-Zone Silicon

Cited by 8 publications

References 75 publications

The Diffusion Model of Grown-In Microdefects Formation During Crystallization of Dislocation-Free Silicon Single Crystals

The Diffusion Model of Grown-In Microdefects Formation During Crystallization of Dislocation-Free Silicon Single Crystals

Physics of the formation of microdefects in dislocation-free monocrystals of float-zone silicon

Classification of microdefects in semiconducting silicon

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