MRS Proc. 2000 DOI: 10.1557/proc-610-b7.11 View full text
Ulrich Goesele, Pierre Laveant, Rene Scholz, Norbert Engler, Peter Werner

Abstract: ABSTRACTThe possibility to suppress undesirable diffusion of the base dopant boron in siliconbased bipolar transistor structures by the incorporation of a high concentration of carbon has lead to renewed interest in the behavior of carbon in crystalline silicon. The present paper will review essential features of carbon in silicon including solubility, diffusion mechanisms and precipitation behavior. Based on this information the possibilities to use carbon to influence diffusion of dopants in silicon by the …

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