Carbon distribution in silicon ribbons grown by FFG and cast

Secondary phase inclusions in polycrystalline sheet silicon

“…Note that the two peaks at 607 and 1107 cm À1 are due to substitutional carbon and interstitial oxygen, respectively. Since the SIMS profiles show that the samples contain around 100 ppm volume of carbon rich particles, the absence of the absorption due to SiC [15,16] located at 780-810 cm À1 indicated that most of the carbon rich particles might be a form of graphite.…”

High-temperature complex structures in solar-grade poly-Si

“…Despite observed variations of interstitial oxygen and substitutional carbon concentrations in as-received materials, no structure can be observed in the spectral region 700-1000 cm" for SILSO and HEM material, indicating no significant precipitation formation during crystal growth. A peak close to 800cm" is the only structure that can be seen in the observed range in the as-received EFG-type material, which was attributed to the existence of S i c particles [7].…”

“…The presence of S i c particles is expected due to the specific method of EFG ribbon growth, and in particular due to the erosion of graphite dies and has in fact, been detected in the surface layer of the EFG ribbon [g]. This fact probably induced the attribution of the 800cm" peak to the presence of S i c in the material [ 7 ] . However, dissolution of this peak at relatively low temperatures (650°C) indicates that it can no longer be attributed to the presence of the S i c phase only [9], since S i c does not decompose and/or dissolve at such low temperatures.…”

Surface Contaminant Detection in Semiconductors Using Noncontacting Techniques

“…6͒ This peak was observed earlier in literature and attributed to SiC particles. 10,11 In this defective area, WF values significantly increase ͑Fig. 7͒.…”