Carbon acceptor doping efficiency in GaAs grown by metalorganic chemical vapor deposition

Abstract

Carbon doping efficiency in GaAs grown by metalorganic chemical vapor deposition using intrinsic and extrinsic doping sources is studied. Independent of the carbon source, carbon hydrogen complexes are systematically present and depending on the growth conditions, carbon dimers can be present and form complexes with hydrogen as well. Carbon–hydrogen related complexes and dimers reduce the hole concentration decreasing the doping efficiency. Additionally, the carbon dimer introduces a deep level, decreases the hole mobility and hydrogen bonds stronger to it than to isolated carbon. Depending on the growth conditions it is possible to reach 100% doping efficiency with high hole mobility.

Electrical investigation of carbon intrinsically‐doped GaAs layers grown by metalorganic vapour phase epitaxy from TMGa and TBAs

“…Intrinsic carbon incorporation in MOVPE-grown GaAs layers is enhanced at low growth temperatures and V/III stoichiometric ratio between the metalorganic precursors in the vapour phase, due to the incorporation of methyl radicals on substitutional As sites [6]. Doping levels as high as 10 19 cm -3 were obtained for GaAs by using trimethyl gallium (TMGa) and arsine (AsH 3 ) or trimethyl arsenic (TMAs) [7,8].…”

Study of intrinsically carbon-doped AlGaAs layers for tunnel diodes in multi-junction solar cells

“…If carbon would be incorporated on interstitial sites, an effect on the lattice contraction would be expected. It is reported that carbon-hydrogen and carbon dimer complexes in as-grown GaAs reduce the electrical activation degree of carbon acceptors [7]. We believe this to be true for AlGaAs as well.…”

Hydrogen-related defects in InGaP/GaAs heterojunction bipolar transistors

“…As seen in Fig. 3, the V/III ratio of 0.7 contains C-H and C 2 -H complexes; however, only the C-H complex accounts for the gain-drift because the C 2 -H complex does not ionize at RT due to its deep acceptor level [18]. We thus conclude that the V/III ratio of 25 contains less of C-H complex and no C 2 -H complex, which leads to a high thermal stability.…”