“…The method for calculating the capacitance dependence was proposed to compare with the experimental results. [7][8][9] Particularly, in the work of Chiquito et al, 9 a negative differential capacitance ͑NDC͒ characteristic was observed at low temperatures and a model was provided to explain the results. However, in the consideration of practical application, such as quantum dot memory devices, the operation temperature has to be much higher.…”
mentioning
confidence: 99%
“…That is, the n dot in formula ͑4͒ is nearly zero and thereby the ͑x͒ would tend to be classical. 8,9 When the applied reverse voltage decreases, the Fermi level E f approaches to the first energy level E dot1 and it leads to filling ground energy states with electrons. As a result, n dot1 increases as follows:…”
mentioning
confidence: 99%
“…Because the capture/escape time for the second states ͑E dot2 ͒ in QDs could be much shorter, some of the electrons in the second states can catch up with the chargingdischarging process of the testing signal V . So, to take this effect into account we have to include an additional capacitance C dot2 : 8,9 C dot 2 = e dn dot 2…”
The negative differential capacitance ͑NDC͒ of Schottky diodes with the layers of InAs quantum dots ͑QDs͒ has been clearly observed near room temperature. A simple model involving two zero-dimensional quantum states is proposed to explain the NDC behavior. The simulation results show that the NDC is caused by the fast charging-discharging process in the second states of QDs.
“…The method for calculating the capacitance dependence was proposed to compare with the experimental results. [7][8][9] Particularly, in the work of Chiquito et al, 9 a negative differential capacitance ͑NDC͒ characteristic was observed at low temperatures and a model was provided to explain the results. However, in the consideration of practical application, such as quantum dot memory devices, the operation temperature has to be much higher.…”
mentioning
confidence: 99%
“…That is, the n dot in formula ͑4͒ is nearly zero and thereby the ͑x͒ would tend to be classical. 8,9 When the applied reverse voltage decreases, the Fermi level E f approaches to the first energy level E dot1 and it leads to filling ground energy states with electrons. As a result, n dot1 increases as follows:…”
mentioning
confidence: 99%
“…Because the capture/escape time for the second states ͑E dot2 ͒ in QDs could be much shorter, some of the electrons in the second states can catch up with the chargingdischarging process of the testing signal V . So, to take this effect into account we have to include an additional capacitance C dot2 : 8,9 C dot 2 = e dn dot 2…”
The negative differential capacitance ͑NDC͒ of Schottky diodes with the layers of InAs quantum dots ͑QDs͒ has been clearly observed near room temperature. A simple model involving two zero-dimensional quantum states is proposed to explain the NDC behavior. The simulation results show that the NDC is caused by the fast charging-discharging process in the second states of QDs.
“…The distinct behaviours of the capacitance in QWR undoped devices can be related to a two-dimensional electron gas (2DEG) formation as a result of electron localisation in the InGaAs wetting layer (WL). Chiquito et al [27] observed a plateau-like dependence in their C-V measurements at the bias range 0.5 to 1.5 V in an InAs/ GaAs self-assembled QD system. They related this behaviour to the formation of 2DEG at the (GaAs) 4 /(AlAs) 11 /GaAs top interface rather than at the WL because their PL and Raman scattering measurements proved that there was no contribution of the WL.…”
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