Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature

Lin, Sheng-Di; Ilchenko, V. V.; Marin, V. V.; Shkil, N. V.; Buyanin, A. A.; Panarin, K. Y.; Tretyak, O. V.

doi:10.1063/1.2752737

Cited by 19 publications

(17 citation statements)

References 10 publications

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“…Similar results for InAs/GaAs QDs embedded into an InGaAs QW have been reported recently in Ref. [10]. The charging process results in a repelling potential at the QD plane.…”

Section: Contributedsupporting

confidence: 80%

Electrical study of InAs/GaAs quantum dots with two different environments

Kaniewska

Engström

Kaczmarczyk

et al. 2008

Phys. Status Solidi (c)

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Unusually complex spectra have been obtained for InAs/GaAs quantum dot (QD) structures when studied as a function of applied bias by deep level transient spectroscopy (DLTS). In spite of their complexity, basic processes for electron escape from the QDs have been recognized. We show that due to the variety of transitions involving direct tunneling and more complex thermal transitions, due to QD size fluctuations, and environmental dependent QD carrier population, measurement conditions have to be carefully suited for characterizing transport properties of the QDs. Additionally, on the basis of results of a comparative study under chosen measurement conditions, we conclude that the states of the InAs QDs shift towards the middle of the energy gap if the QDs are capped with a Ga‐rich InGaAs insertion. It explains a red‐shift of the emission wavelength that was found by photoluminescence measurements (PL). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Similar results for InAs/GaAs QDs embedded into an InGaAs QW have been reported recently in Ref. [10]. The charging process results in a repelling potential at the QD plane.…”

Section: Contributedsupporting

confidence: 80%

Electrical study of InAs/GaAs quantum dots with two different environments

Kaniewska

Engström

Kaczmarczyk

et al. 2008

Phys. Status Solidi (c)

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“…Under appropriate bias voltage, the average electric field in the active region (120 nm wide) of the detector is 10 7 V/cm. Assuming that the mobility of electron and hole is 8000 cm 2 /V⋅s and 400 cm 2 /V⋅s, respectively, their transit times are correspondingly about 1 × 10 −14 s and 1 × 10 −13 s, which is on a much shorter time than the electron-hole recombination time of about 1 × 10 −9 s [10,15,16]. Since the transition time is about four orders of magnitude shorter than the electron-hole recombination time, it allows a very high multiplication in detector.…”

Section: Discussionmentioning

confidence: 99%

Photoelectric Characteristics of Double Barrier Quantum Dots-Quantum Well Photodetector

Wang

Yue

Guo

2015

Advances in Condensed Matter Physics

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The photodetector based on double barrier AlAs/GaAs/AlAs heterostructures and a layer self-assembled InAs quantum dots and In 0.15 Ga 0.85 As quantum well (QW) hybrid structure is demonstrated. The detection sensitivity and detection ability under weak illuminations have been proved. The dark current of the device can remain at 0.1 pA at 100 K, even lower to 3.05 × 10 −15 A, at bias of −1.35 V. Its current responsivity can reach about 6.8 × 105 A/W when 1 pw 633 nm light power and −4 V bias are added. Meanwhile a peculiar amplitude quantum oscillation characteristic is observed in testing. A simple model is used to qualitatively describe. The results demonstrate that the InAs monolayer can effectively absorb photons and the double barrier hybrid structure with quantum dots in well can be used for low-light-level detection.

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“…At the same time, the negative differential capacitance (NDC) is an interesting effect, where the derivative of the capacitance voltage (CV) plot is negative in some voltage range [18]. It has found interesting applications, such as in a metal–semiconductor field-effect transistor [19].…”

Section: Introductionmentioning

confidence: 99%

Sb-mediated Ge quantum dots in Ti–oxide–Si diode: negative differential capacitance

Rangel-Kuoppa

Tonkikh

Werner

et al. 2013

Science and Technology of Advanced Materials

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The negative differential capacitance (NDC) effect is observed on a titanium–oxide–silicon structure, formed on n-type silicon with embedded germanium quantum dots (QDs). The Ge QDs were grown by an Sb-mediated technique. The NDC effect was observed for temperatures below 200 K. We found that approximately six to eight electrons can be trapped in the valence band states of Ge QDs. We explain the NDC effect in terms of the emission of electrons from valence band states in the very narrow QD layer under reverse bias.

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Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature

Cited by 19 publications

References 10 publications

Electrical study of InAs/GaAs quantum dots with two different environments

Electrical study of InAs/GaAs quantum dots with two different environments

Photoelectric Characteristics of Double Barrier Quantum Dots-Quantum Well Photodetector

Sb-mediated Ge quantum dots in Ti–oxide–Si diode: negative differential capacitance

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