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The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy ( . It has been found that the irradiation has no effect on these intrinsic defects. The irradiation affected only a shallow donor level close to Ec [0.06 eV-0.18 eV] on the p-side of the p-i-n junction.

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