Investigation of defects in indium doped TiO 2 thin films using electrical and optical techniques

Fabrication and Characterization of Type‐II Heterostructure n:In2O3/p:in‐TiO2 for Enhanced Photocatalytic Activity

“…Many authors have reported that In 2 O 3 is an n-type semiconductor with bandgap %2.80 eV, [20,33] whereas indium doping in TiO 2 lattice converts the n-TiO 2 to p-type with bandgap %2.89 eV. [33][34][35][36] Atanacio et al [34] reported that 0.3 at% indium incorporation into titanium sites of the TiO 2 lattice led to the formation of acceptors in the bulk phase. Nowotny et al [35] also reported on the attainment of p-type conductivity on doping TiO 2 with 0.4 at% of indium.…”

“…Different researchers have reported a red shift in bandgap energy on indium doping. [35][36][37] Jin et al [33] obtained a bandgap of 2.89 eV for the In 2 O 3 /TiO 2 composites and reported that such a red shift is caused by the new impurity energy level in the bandgap. Sasikala et al [37] studied the effect of doping by N and In in TiO 2 , as well as codoping by In and N, on its optical absorption properties.…”

Effect of indium doping on the electrical and structural properties of TiO2 thin films used in MOS devices

“…Taşdemir et al [13] investigated the ideality factor (n), barrier height ( 0 ), series resistance (Rs), shunt resistance (Rsh) and interface states density (Nss) of Al/TiO2/p-Si and Al/TiO2:Zr /p-Si structures at room temperature, and found that Zirconium as a dopant improves the rectifying ratio and increases the barrier height. Al Saqri et al [25] examined defects in indium doped TiO2 thin films grown on n-Si by e-beam evaporation using current-voltage (I-V), capacitance-voltage (C-V) and Deep Level Transient Spectroscopy (DLTS). They reported that both the reverse-bias leakage current and free carrier concentration increase with increasing indium doping.…”

“…They reported that both the reverse-bias leakage current and free carrier concentration increase with increasing indium doping. To further expand Al Saqri et al [25] work, a thorough study of the same Schottky structures Ti/Au/15nm In/TiO2 TFs/n-Si named Low Indium Doped sample (LID) and Ti/Au/50nm In/TiO2 TFs/n-Si called High Indium Doped sample (HID) is undertaken using forward and reverse-bias I-V characteristics over the temperature range 80 K-400 K. The impact of temperature and Indium as dopant on TiO2 on electrical Schottky parameters (n, 0 , Rs), on forward and reverse current transport mechanism, on barrier inhomogeneity and on interface state density are obtained.…”

Ultraviolet detection by Cr doped In 2 O 3 TF

“…On the other hand, it is important to understand the current conduction mechanism of the devices. In MOS, the presence and role of oxygen vacancies had been explored broadly with experiments [7][8][9] and theories [10,11]. However, there are only a few reports available on the analysis of defect states by means of temperature-varying current-voltage (I-V) characterisations and photosensitivity measurements of such devices [12], but still no report on Cr:In 2 O 3 TFs, which is important to operate them swiftly as UV detectors.…”