Effect of indium doping on the electrical and structural properties of TiO2 thin films used in MOS devices

Abstract

We investigated the effect of Indium (In) doping on the structural and electrical properties of Ti/Au/ TiO2:In/n-Si metal-oxide-semiconductor (MOS) devices. Sputtering grown TiO2 thin films on Si substrate were doped using two In-films with 15 nm and 50 nm thicknesses leading to two structures named Low Indium Doped (LID) sample and High Indium Doped (HID) sample, respectively. XRD analysis shows no diffraction pattern related to Indium indicating that In has been incorporated into the TiO2 lattice. Current-Voltage (I-V) characteristics show that rectification ratio at 2V is higher for HID sample than for LID sample. Evaluated barrier height, ϕ B0 , decreased while the ideality factor, n, increased with decreasing temperature. Such behavior is ascribed to barrier inhomogeneity that was assumed to have a Gaussian Distribution (GD) of barrier heights at interface. Evidence of such GD was confirmed by plotting ϕ B0 versus n. High value of mean barrier ϕ ̅ B0 and lower value of standard deviation (σ) of HID structure are due to indium doping which increases the barrier homogeneities. Finally, estimated Richardson constants A* are in good agreement with theoretic values (112 A/cm 2 K 2 ), particularly, for the HID structure.

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al2O3 Interfacial Layer over Wide Temperature Range

“…Therefore, we can say that the On the other hand, inhomogeneities in BHs can be defined through n "T 0 -effect" or "Toanomaly." The changes in value of n is inversely of temperature as given follows: 24,25 n T n T T 7 0 0…”

“…This case may be described by the lateral inhomogeneity of BHs. [23][24][25][26][27][28][29][30] According to GD model, the formed of BH between semiconductor and Schottky contact hasn't homogenous and a mean-BH ECS Journal of Solid State Science and Technology, 2023 12 083010 ( B0 Φ ¯) is defined in Eq. 9a, depending on the standard-deviation S (σ ) of BH.…”

The temperature induced current transport characteristics in the orthoferrite YbFeO3− δ thin film/p-type Si structure

“…In figure 7, the downward curvature in the forward I -V curves in voltage region above 2.0 V originates from the series resistance of the HJ which arises from the contribution of YbFeO 3−δ thin film and p-Si substrate thicknesses. The resistance of the HJ affects the current characteristics and performance of the HJ device at sufficiently high forward and reverse bias voltages, respectively [57][58][59]. The voltage and temperature dependent resistance of the HJ can be determined by applying Ohm's law (dV/ dI) to the current-voltage data in figure 7.…”

“…Anderson [67], who made a detailed study on the current transport mechanism and drawing energy band diagrams of the hetero-junctions, used the standard TE current theory to obtain some diode parameters such as ideality factor n and BH Φ IV in the HJs. Furthermore, it is known that TE current method is a suitable method to calculate Φ IV and ideality factor n from fit to the linear portion of the forward bias I -V curve [56][57][58][59][67][68][69][70][71][72][73][74][75][76][77][78][79][80][81][82]. Moreover, the TE current method can be employed to understand the nature and effect of the barrier modification of the heterojunction under the MT and bias voltage [72].…”

Methanol Steam Reforming on Bimetallic Catalysts Based on In and Nb Doped Titania or Zirconia: A Support Effect

“…There are data about methanol steam reforming on titania-based catalysts [33,44,45]. Doping with trivalent and pentavalent elements can lead to defects formation in titania structure and affect their electrophysical properties, primarily oxygen ions mobility [46][47][48][49][50]. Since this had a promoting influence on MSR process on the zirconia based catalysts, the same can be expected for titanium oxide as well.…”