Capability of Semiconducting NiO Films in Gamma Radiation Dosimetry

Guziewicz, M.; Jung, W.; Grochowski, Jakub; Borysiewicz, M.; Gołaszewska, K.; Kruszka, R.; Baranska, A.; Piotrowska, A.; Witkowski, B.S.; Domagała, J. Z.; Gryziński, M.; Tymińska, K; Stonert, A.

doi:10.12693/aphyspola.120.a-69

Cited by 10 publications

(14 citation statements)

References 7 publications

(3 reference statements)

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“…In contrast, the MPM film shows an increase in α in the UV spectral region. Accordingly, conductive films tend to show black‐color as has been observed for the sputtered films …”

Section: Resultssupporting

confidence: 53%

Relation Between Electrical and Optical Properties of p‐Type NiO Films

Ono

Nagai

Yamaguchi

et al. 2018

Physica Status Solidi (b)

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Relation between the electrical and optical properties of p‐type NiO films prepared either by RF sputtering or by the molecular precursor method is studied in terms of changes in crystallinity, resistivity ρ and absorption coefficients α. Values of α are correlated with electronic structures near the valence band maximum, which are obtained from the X‐ray photoelectron spectroscopy measurements and the density functional theory calculations. The ρ and α values are found to be strongly influenced by the crystallinity as well as the Ni vacancies as acceptor‐type intrinsic point defects.

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“…In contrast, the MPM film shows an increase in α in the UV spectral region. Accordingly, conductive films tend to show black‐color as has been observed for the sputtered films …”

Section: Resultssupporting

confidence: 53%

Relation Between Electrical and Optical Properties of p‐Type NiO Films

Ono

Nagai

Yamaguchi

et al. 2018

Physica Status Solidi (b)

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“…Since ZnO, CdO, and SnO 2 are known to be predominantly n‐type, we provide electron masses for those. For MnO and NiO, we compute hole masses due to the interesting possibility of p‐type conductivity . While the conduction band minimum appears at the Γ point for ZnO, CdO, and SnO 2 , the valence‐band maximum is located at the T point for MnO and NiO.…”

Section: Effective Electron and Hole Massesmentioning

confidence: 99%

“…However, this seems to be very tricky for many oxides. For this reason, we investigate different oxides for which it is known that they are either good electron conductors (CdO, ZnO, SnO 2 ) or potentially interesting materials for hole conductivity (MnO, NiO) .…”

Section: Introductionmentioning

confidence: 99%

Photoemission spectra and effective masses of n‐ and p‐type oxide semiconductors from first principles: ZnO, CdO, SnO₂, MnO, and NiO

Rödl

Schleife

2013

Physica Status Solidi (a)

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While there is a persistent interest in oxides, e.g., for semiconductor technology or optoelectronics, it seems to be difficult to achieve n‐type and p‐type doping for one and the same material. At the same time, it is important to understand the electronic structure for both types of doping individually. In this work, we use modern electronic‐structure calculations to compute the density of states as well as effective electron and hole masses for n‐type (ZnO, CdO, SnO2) and p‐type (MnO, NiO) oxide materials. We establish our ab initio electronic structures by comparison to photoemission experiments at various incident photon energies. Taking into account the photoionization cross‐sections, we are able to analyze the contributions of different atomic states and to verify the results by comparison to measured data. Based on these electronic structures, we calculate free‐electron and free‐hole masses as well as their dependence on the concentration of free carriers in the system. For SnO2, we compare with experimental results from another article (see M. Feneberg et al., Phys. Status Solidi A, DOI 10.1002/pssa.201330147 (2013) ) in this special issue.

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“…Прозрачные проводящие слои широко применяются для изготовления приборов электроники, оптоэлектроники и солнечной энергетики [1,2]. Оксид никеля (NiO) является прозрачным проводящим оксидом, имеющим проводимость p-типа, обладает хорошими электрическими, термоэлектрическими характеристиками и высокой химической стойкостью [3][4][5][6].…”

Section: Introductionunclassified

Температурные зависимости электрических параметров анизотипных гетеропереходов NiO/CdTe

Parkhomenko¹,

Солован²,

Mostovoi³

et al. 2017

Физика И Техника Полупроводников

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Изготовлены гетероструктуры NiO/CdTe методом реактивного магнетронного распыления. Измерены вольт-амперные характеристики при различных температурах. Установлено, что основными механизмами токопереноса через гетеропереход NiO/CdTe при прямых смещениях является генерационнорекомбинационный и туннельный, а при обратных-туннельный. Гетероструктуры генерируют напряжение холостого хода Voc = 0.26 В и ток короткого замыкания Isc = 58.7 мкА/см 2 при интенсивности освещения 80 мВт/см 2 .

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Capability of Semiconducting NiO Films in Gamma Radiation Dosimetry

Cited by 10 publications

References 7 publications

Relation Between Electrical and Optical Properties of p‐Type NiO Films

Relation Between Electrical and Optical Properties of p‐Type NiO Films

Photoemission spectra and effective masses of n‐ and p‐type oxide semiconductors from first principles: ZnO, CdO, SnO₂, MnO, and NiO

Температурные зависимости электрических параметров анизотипных гетеропереходов NiO/CdTe

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Capability of Semiconducting NiO Films in Gamma Radiation Dosimetry

Cited by 10 publications

References 7 publications

Relation Between Electrical and Optical Properties of p‐Type NiO Films

Relation Between Electrical and Optical Properties of p‐Type NiO Films

Photoemission spectra and effective masses of n‐ and p‐type oxide semiconductors from first principles: ZnO, CdO, SnO2, MnO, and NiO

Температурные зависимости электрических параметров анизотипных гетеропереходов NiO/CdTe

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Product

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Photoemission spectra and effective masses of n‐ and p‐type oxide semiconductors from first principles: ZnO, CdO, SnO₂, MnO, and NiO