Phone: þ48 22 5487942 1 Â 10 8 V/&, respectively for C and Al implantation. Characterization by XRD, Raman and photoluminescence spectroscopy provides evidence that implantation damages the crystal lattice, yielding insulating properties. It is demonstrated that the isolation is stable up to 600 8C. We also demonstrate AlGaN/GaN HEMTs on semi-insulating Ammono-GaN substrates working both in DC (I DS ¼ 800 mA/mm) and RF (up to 6.5 GHz) mode with isolation prepared by means of the described approach.
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