Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

Taube, Andrzej; Kamińska, E.; Kozubal, Maciej; Kaczmarski, Jakub; Wojtasiak, Wojciech; Jaśiński, Jakub; Borysiewicz, M.; Ekielski, M.; Juchniewicz, Marcin; Grochowski, Jakub; Myśliwiec, Marcin; Dynowska, E.; Barcz, A.; Prystawko, P.; Zając, M.; Kucharski, Robert; Piotrowska, Anna

doi:10.1002/pssa.201431724

Cited by 42 publications

(20 citation statements)

References 28 publications

(39 reference statements)

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“…To verify thermal impedance measurements the transistor T8 was thermal modeled using 3-dimensional equation of heat conduction which is solved by means of FDTD method [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26]. The T8 die modeled GaN HEMT structure and the assumed heat model flow are shown in Figure 9a,b, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…The following GaN-based HEMTs have been a test subject in our study: commercially available GaN-on-SiC HEMTs CGH27015F (packaged) from Wolfspeed, and TGF2023-2-01 (die) from Qorvo (Greensboro, NC, USA), GaN-on-Si HEMT NPT2022 (packaged) from MACOM and GaN-on-GaN HEMT (marked T8) fabricated within PolHEMT project [13,14]. The T8 transistor was made on epitaxial layers grown on a truly bulk monocrystalline semi-insulating GaN.…”

Section: Samplesmentioning

confidence: 99%

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Characterization of Self-Heating Process in GaN-Based HEMTs

et al. 2020

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Thermal characterization of modern microwave power transistors such as high electron-mobility transistors based on gallium nitride (GaN-based HEMTs) is a critical challenge for the development of high-performance new generation wireless communication systems (LTE-A, 5G) and advanced radars (active electronically scanned array (AESA)). This is especially true for systems operating with variable-envelope signals where accurate determination of self-heating effects resulting from strong- and fast-changing power dissipated inside transistor is crucial. In this work, we have developed an advanced measurement system based on DeltaVGS method with implemented software enabling accurate determination of device channel temperature and thermal resistance. The methodology accounts for MIL-STD-750-3 standard but takes into account appropriate specific bias and timing conditions. Three types of GaN-based HEMTs were taken into consideration, namely commercially available GaN-on-SiC (CGH27015F and TGF2023-2-01) and GaN-on-Si (NPT2022) devices, as well as model GaN-on-GaN HEMT (T8). Their characteristics of thermal impedance, thermal time constants and thermal equivalent circuits were presented. Knowledge of thermal equivalent circuits and electro–thermal models can lead to improved design of GaN HEMT high-power amplifiers with account of instantaneous temperature variations for systems using variable-envelope signals. It can also expand their range of application.

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Section: Resultsmentioning

confidence: 99%

Section: Samplesmentioning

confidence: 99%

Characterization of Self-Heating Process in GaN-Based HEMTs

et al. 2020

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“…The use of regrown, highly-doped In

N/GaN sub-contact layers resulted in decreasing the contact resistivity from 0.8–1.1

·mm (as for recessed ohmic contacts) to 0.3–0.6

·mm and decreasing value of parasitic elements like source and drain resistance (see Table 1 ). This leads to enhancement of DC and RF performance as compared to AlGaN/GaN HEMTs on semi-insulating Ammono-GaN substrates with recessed Ti/Al/Mo/Au ohmic contacts [ 23 ]. An 1 A/mm on-state current was achieved and

and

were 21 and 30 GHz, respectively, for 0.8

m gate length devices.…”

Section: Discussionmentioning

confidence: 99%

“…In the following, the isolation of adjacent devices was done by using two-step Al

ion implantation [ 23 ]. The implant consisted of Al ions at (1st step) energy of 800 keV, and dose 1.5 × 10

and (2nd step) at energy 300 keV, and dose 1 × 10

.…”

Section: Methodsmentioning

confidence: 99%

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

et al. 2018

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AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3–0.6 Ω·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance.

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“…Innowacyjność projektu, w skali światowej, polega na hodowaniu struktur półprzewodnikowych AlGaN/GaN na monokrystalicznym półizolacyjnym podłożu GaN wytwarzanym unikatową metodą ammonotermalną przez firmę Ammonokonsorcjanta PolHEMT. Do wzrostu heterostruktur o wysokiej koncentracji i ruchliwości dwuwymiarowego gazu elektronowego (2-DEG) i o zwiększonej perfekcji strukturalnej wykorzystano techniki MOVPE (IWC) i MBE (IF PAN) [1]. W pierwszym etapie projektu wytwarzano głównie struktury 2-bramkowe tzn.…”

Section: Wprowadzenieunclassified

Parametry tranzystorów GaN HEMT - wyniki I etapu projektu PolHEMT

Wojtasiak

Gwarek

Piotrowska

et al. 2015

ELECTROTECHNICAL REVIEW

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jest opracowanie nowego typu tranzystora mikrofalowego na pasmo S z wykorzystaniem struktur AlGaN/GaN hodowanych na podłożach z półizolacyjnego monokrystalicznego GaN wytwarzanych metodą ammonotermalną (Ammono). Referat stanowi krótkie podsumowanie pierwszego etapu projektu w formie zestawienia parametrów elektrycznych struktur GaN PolHEMT i komercyjnych tranzystorów GaN HEMT produkowanych przez wiodące firmy.

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Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

Cited by 42 publications

References 28 publications

Characterization of Self-Heating Process in GaN-Based HEMTs

Characterization of Self-Heating Process in GaN-Based HEMTs

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

Parametry tranzystorów GaN HEMT - wyniki I etapu projektu PolHEMT

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