Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states

Cohen, J. David; Lang, D. V.

doi:10.1103/physrevb.25.5321

Cited by 233 publications

(103 citation statements)

References 33 publications

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“…As previously mentioned, the DOS distribution derived from the capacitance measurements is a spatially averaged value, whilst a more spectroscopic character is associated to the DOS distribution derived from the differential conductance [14][15][16]. According to this we derived the DOS distribution (see Fig.…”

Section: Differential Admittance (Da) Studymentioning

confidence: 99%

“…for ψ S > V g = (E g /2 − E F )/e, when a deep depletion region at the surface of a-SC/El junctions appears, according to Refs. [14][15][16] (see Fig. 3) the total capacitance of barrier can be modelled as a two series capacitance: where the first term of Eq.…”

Section: Theoretical Background On Amorphous Semiconductor Schottky Bmentioning

confidence: 99%

“…(a) as for the ψ C parameter the constraint of a decrease of 0.06 eV for decade of frequency was introduced in the fitting procedure and a check of the acceptability of the ψ C choice was the prediction of flattening of capacitance curves at the frequency corresponding to ψ C = 0; (b) the V g parameter was calculated by assuming an equal emission-capture time constant for electrons and hole in the conduction and in valence band [14] and by using a measured mobility gap for a-Nb 2 O 5 film equal to 3.40 eV; (c) the V fb value for fitting the C SC (x, ω, ψ S ) and G SC (x, ω, ψ S ) curves was allowed to differ no more than 0.025 V.…”

Section: A2 Differential Admittance Curves Fittingmentioning

confidence: 99%

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Physicochemical characterization of passive films on niobium by admittance and electrochemical impedance spectroscopy studies

Quarto¹,

Mantia²,

Santamaria³

2005

Electrochimica Acta

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An analysis of the electronic properties of amorphous semiconductor-electrolyte junction is reported for thin (D ox < 20 nm) passive film grown on Nb in acidic electrolyte. It will be shown that the theory of amorphous semiconductor-electrolyte junction (a-SC/El) both in the low band-bending and high band-bending regime is able to explain the admittance data of a-Nb 2 O 5 /El interface in a large range (10 Hz-10 kHz) of frequency and electrode potential values.A modelling of experimental EIS data at different potentials and in the frequency range of 0.1 Hz-100 kHz is presented based on the theory of amorphous semiconductor and compared with the results of the fitting of the admittance data obtained in a different experiment. Some preliminary insights on the possible dependence of the density of state (DOS) distribution on the mobile defects concentration and mechanism of growth of anodic film on valve metals are suggested.

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Section: Differential Admittance (Da) Studymentioning

confidence: 99%

Section: Theoretical Background On Amorphous Semiconductor Schottky Bmentioning

confidence: 99%

Section: A2 Differential Admittance Curves Fittingmentioning

confidence: 99%

See 1 more Smart Citation

Physicochemical characterization of passive films on niobium by admittance and electrochemical impedance spectroscopy studies

Quarto¹,

Mantia²,

Santamaria³

2005

Electrochimica Acta

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“…Thus, the Mott-Schottky analysis can be used for amorphous oxide films as long as no major changes occur. Against, Di Quarto et al [41] proposed a model for the interpretation of the impedance responses of anodic semiconductor oxides by applying the amorphous semiconductor theory formulated by Cohen and Lang [42].…”

Section: Photoelectrochemical Performance Of Electrode Smentioning

confidence: 99%

Photoelectrochemical properties of MoO2 thin films

Dukštienė

Sinkevičiūtė

2013

J Solid State Electrochem

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Thin MoO 2 films were electrodeposited on a selenium pre-deposited SnO 2 |glass plate. The photoelectrochemical properties of MoO 2 films were investigated in 0.1 M Na 2 SO 4 solution by the ultraviolet-visible spectrophotometry, linear sweep voltammetry, and altering current impedance measurement techniques. It was found that under illumination with the incident light of λ=366 nm, the photo response of the MoO 2 |SnO 2 |glass electrode resulted from the MoO 2 layer, while the SnO 2 layer served as a sink for photogenerated charge carriers. The MoO 2 film exhibited ntype conductivity. A schematic band structure diagram of MoO 2 in 0.1 M Na 2 SO 4 solution was constructed. The flat band potential (E fb ), the donor concentration (N D ), the photogeneration current efficiency depended on MoO 2 film thickness. The [Fe(CN) 6 ] 4−/3− redox PEC cell with MoO 2 | SnO 2 |glass plate as a photoanode was constructed. Power output characteristics such as the open circuit voltage (V OC ), short circuit current (I SC ), the fill factor (FF), and the lightto-electrical conversion efficiency (η) were determined. The maximum light-to-electrical conversion efficiency exhibited by the PEC cell was 0.94 %.

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“…It is also seen that the positions of these peaks correspond to the steplike curvatures of C͑f͒, as expected from admittance spectroscopy theory. 16,18 Recently a revised approach has been suggested to admittance characteristics of a p-n junction containing deep levels in the depletion region, which employed a concept of single defect capacitance and also included a rigorous evaluation of displacement currents in the system. 19 In particular, the proposed formulation of that work suggests a simple relation between normalized conductance and capacitance for the case of weak screening:…”

Section: A Admittance Of Unetched Devicesmentioning

confidence: 99%

Admittance spectroscopy of CdTe∕CdS solar cells subjected to varied nitric-phosphoric etching conditions

Proskuryakov

Durose

Taele

et al. 2007

Journal of Applied Physics

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. In this work we investigate the electric and structural properties of CdTe/ CdS solar cells subjected to a nitric-phosphoric ͑NP͒ acid etching procedure, employed for the formation of a Te-rich layer before back contacting. The etching time is used as the only variable parameter in the study, while admittance spectroscopy is employed for the characterization of the cells' electric properties as well as for the analysis of the defect energy levels. Particular attention was also given to the characteristics of unetched devices and it is shown that despite the larger height of back-contact barrier such samples show well defined admittance spectra, as well as allow for extraction of as much as five defect levels in the range of 0.08-0.9 eV above the valence band. In contrast, admittance characteristics of the etched samples show a decrease of the number of the detectable trap levels with increasing etching time. ͑Hence it is usual for only one or two trap levels to be reported in the literature for finished devices.͒ The latter leads to the anomalous Arrhenius energy plots as well as the breakdown of low-frequency capacitance characteristics for samples etched with times larger than 30 s. The observed effects are attributed to physical thinning of the cells, the etching out of grain boundaries, and the tellurium enrichment of the CdTe surface by NP etching.We also perform analysis of the back-contact barrier height as extracted from dark I-V measurements at different temperatures. The dependence of this barrier height on NP etching time is compared with that of conversion efficiency, from which conclusions are drawn about both positive and negative effects of the nitric-phosphoric etch.

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Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states

Cited by 233 publications

References 33 publications

Physicochemical characterization of passive films on niobium by admittance and electrochemical impedance spectroscopy studies

Physicochemical characterization of passive films on niobium by admittance and electrochemical impedance spectroscopy studies

Photoelectrochemical properties of MoO2 thin films

Admittance spectroscopy of CdTe∕CdS solar cells subjected to varied nitric-phosphoric etching conditions

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