Broadband small-signal model and parameter extraction for deep sub-micron MOSFETs valid up to 110 GHz

Temperature dependence of the power gain and scattering parametersS11 andS22 of an RF nMOSFET with advanced RF-CMOS technology

“…It is also noted that for multicarrier telecommunication systems, the impact of CTB on BER degradation have been experimentally investigated [5], while the present study provides a rigorous analysis of CTB, and its contribution to the end-to-end system BER performance degradation and receiver dynamic range, and role in parameter tradeoffs.…”

Analysis of RF scattering parameters and noise and power performances of RF‐power MOS in 0.15‐μm RF cmos technology for RF SOC applications

“…In addition, the enhancement of the kink phenomenon can also be interpreted in terms of poles and zeros [14,15]. The present analysis can enable RF engineers to understand the behaviors of S parameters more deeply, and hence will be helpful in the creation of a fully scalable wideband RF power MOS or CMOS model (up to 110 GHz) for RF SOC applications [5,6]. Figure 2 shows the measured square of the output-port shortcircuit current gain ͉H 21 ͉ 2 and maximum stable power gain/maximum available power gain MSG/MAG versus frequency characteristics of the RF-power n-MOSFET with 400-m total gate width at V DS ϭ 3.0 V and V GS ϭ 1.8 V. The current-gain cutoff frequency f T and maximum oscillation frequency f MAX are 18 and 30 GHz, respectively, which means that the developed RF power MOSFETs are very suitable for RF-power applications.…”

“…One of the main reasons for this is the availability of RF-power MOSFETs/HBTs with high current-gain cutoff frequency f T , maximum oscillation frequency f MAX , power-addedefficiency (PAE), power gain G p , and output power P out , due to the rapid progress of silicon-process technologies [5][6][7]. Although many analytical expressions of the f T and f MAX of transistors have been derived [8 -10], none of them includes the silicon-substrate effect.…”

“…Despite much effort, a design for integrating VCOs still remains a main problem due to the stringent phase-noise requirements in standards, such as TIA/EIA IS-98. Recently, many research results for the VCO with 1.5-2 GHz using SiGe HBT or Si CMOS have been published [1][2][3][4][5]. However, with the regard the characteristics of high frequency and low noise, InGaP/GaAs HBT has several advantages over Si-based devices for VCO.…”

High‐quality‐factor (33) and high‐resonant‐frequency (35 GHz) spiral inductors fabricated in 0.25‐μM mixed‐signal/RF‐CMOS technology

“…The main reasons for this are the transistors' high performance, the low cost, and the high degree of integration with baseband circuits [5]. However, the quality factor (Q factor) and noise figure (NF) (that is, power loss) performances of spiral inductors fabricated on normal silicon substrates (ϳ750 m) have not been satisfactory up to now, mainly due to highseries metal resistance and silicon substrate loss [6 -12].…”