On-chip microstrip and coplanar waveguide structures were designed and fabricated in RF CMOS foundry processes. The wideband transmission line characteristics such as characteristic impedance, attenuation constant, propagation delay, and their electrical RLC parameters were evaluated based on S-parameter measurements in the millimeter-wave range. In addition, a SPICE-compatible RLC lumped element model including the skin-effect and the substrate RC network is employed to account for transmission line effects in interconnect over a wide frequency range up to 110 GHz.
This paper reports on the first unitary set of geometry-scalable, wide-hand compact models for all the components o f a 0.13 p m RF CMOS technology and which are valid up to 50 GHz. Verification of the active and passive device models i s achieved at the device level as well as by comparing measurements and simulation results of the S parameter response and jitter generation o f high-speed circuits operating above 10 GHz from a single 1.2-V supply.
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