Broadband RF-MEMS Based SPDT

DiNardo, S.; Farinelli, Paola; Giacomozzi, F.; Mannocchi, G.; Marcelli, R.; Margesin, B.; Mezzanotte, P.; Mulloni, Viviana; Russer, P.; Sorrentino, R.; Vitulli, F.; Vietzorreck, Larissa

doi:10.1109/eumc.2006.281475

Cited by 14 publications

(14 citation statements)

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“…Its RF performance is excellent over a large frequency band (DC-30 GHz) [1][2][3]. At the same time, two examples are commercially available: RMSW220 (RadantMEMS) and 2SMES-01 (OMRON Electronic components) whose bandwidth is narrower (DC-12 GHz).…”

Section: Introductionmentioning

confidence: 98%

“…FSS is infinite periodically arranged metallic-patch elements or aperture elements within a metallic screen. It can be used in various applications, such as subreflectors of the frequency reuse system, band-pass radomes for radar cross section controlling and so on [2,3]. FSS should be an infinite array theoretically but in practical applications FSS is finite.…”

Section: Introductionmentioning

confidence: 99%

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DC‐50 GHz RF‐MEMS SPDT switch for high‐reliability applications

Matabosch

Coccetti

Reig

et al. 2012

Micro & Optical Tech Letters

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A large band SPDT (single-pole double-throw) switch based on a very advanced RF-MEMS switch technology for redundancy schemes are presented. This device allowed to reach state-of-the-art working bandwidth (DC-50 GHz) and RF performances (IL (Insection loss) < 0.8 dB, isolation > 25 dB, and RL > 20 dB). The 200 mm MEMS technology process has demonstrated a very good stability with very low dispersion (deviations < 0.05 dB for the IL and < 0.6 dB for the isolation over the entire wafer and frequency range). An accurate electrical equivalent circuit, modeling the SPDT in the DC-65 GHz frequency band, has allowed to extract a contact resistance which is as low as 1.4 X. V C 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:333-335, 2012; View this article online at wileyonlinelibrary.com.

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

DC‐50 GHz RF‐MEMS SPDT switch for high‐reliability applications

Matabosch

Coccetti

Reig

et al. 2012

Micro & Optical Tech Letters

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“…As the supply current for the MEMS switches is nominally zero, the current absorbed by the unit is just the one of the digital circuitry, resulting in a total DC power consumption of less than half watt. It is based on #4 SPDT MEMS switches used to connect the two inputs to the two outputs in a non-blocking configuration [4]. Each in-out path consists of 5.4mm long CPW line (50 Ohm).…”

Section: Introductionmentioning

confidence: 99%

Compact 12×12 Switch Matrix integrating RF MEMS switches in LTCC hermetic packages

Diaferia

Deborgies

Nardo

et al. 2014

2014 44th European Microwave Conference

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A 12x12 Switch Matrix Unit featuring silicon RF MEMS assembled on LTCC boards has been developed under a Contract with the European Space Agency (ESA) for satellite communication application. The Switch Matrix is a complete Engineering Model unit, housed in a mechanical box in aluminum with RF coaxial connectors and DC connectors for powering and commanding. To the authors' knowledge, it is the first complex equipment realized in Europe exploiting the advanced features of the RF MEMS and multilayer LTCC technology to achieve a significant mass and size reduction. Full wave simulations of entire structure are reported, as well as test results. Their agreement is good up to the satellite downlink Cband (3.7-4.2 GHz). An insertion loss of -20dB, return loss of -10dB and isolation of 40-45dB have been measured. The matrix is passive (not provided with amplifiers), having a DC power consumption of less than half watt due to the digital command circuitry.

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“…In another approach combination of switches like series and shunt are used but requires large area and thus not suitable for future compact systems. [9]- [12]. In the present work a novel capacitive shunt RF-MEMS switch has been investigated, which can solve the multi-band tunability problem with keeping the device compactness intact.…”

Section: Introductionmentioning

confidence: 99%

A novel interdigitated, inductively tuned, capacitive shunt RF — MEMS switch for X and K bands applications

Angira

Sundaram

Rangra

2014

The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

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This paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, interdigitation of signal lines with actuation electrodes is used to make a compact device. A bridge structure anchored in between ground planes and attached to two cantilevers on either side has been used to implement the switch structure. This novel structure is used to inductively tune the isolation peaks in X and K bands which is not possible with conventional approach. The designed switch shows an insertion loss of 0.01 dB to 0.11 dB over the frequency range from 1 to 25 GHz. Isolation of 34.71, 34.33, and 40.7 dB has been observed at 10.4 GHz, 11 GHz and 21.4 GHz when bridge is electro-statically actuated with either left, right or both cantilevers in the down state respectively. The bridge structure shows a pull-in voltage of 12.25 V and switching time of 34.40 μs whereas left and right cantilevers have 7.5 V and 57 μs. The designed device can be useful for the future multiband communication applications.

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Broadband RF-MEMS Based SPDT

Cited by 14 publications

References 1 publication

DC‐50 GHz RF‐MEMS SPDT switch for high‐reliability applications

DC‐50 GHz RF‐MEMS SPDT switch for high‐reliability applications

Compact 12×12 Switch Matrix integrating RF MEMS switches in LTCC hermetic packages

A novel interdigitated, inductively tuned, capacitive shunt RF — MEMS switch for X and K bands applications

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Broadband RF-MEMS Based SPDT

Cited by 14 publications

References 1 publication

DC‐50 GHz RF‐MEMS SPDT switch for high‐reliability applications

DC‐50 GHz RF‐MEMS SPDT switch for high‐reliability applications

Compact 12&#x00D7;12 Switch Matrix integrating RF MEMS switches in LTCC hermetic packages

A novel interdigitated, inductively tuned, capacitive shunt RF &#x2014; MEMS switch for X and K bands applications

Contact Info

Product

Resources

About

Compact 12×12 Switch Matrix integrating RF MEMS switches in LTCC hermetic packages

A novel interdigitated, inductively tuned, capacitive shunt RF — MEMS switch for X and K bands applications