A novel interdigitated, inductively tuned, capacitive shunt RF &amp;#x2014; MEMS switch for X and K bands applications

Angira, Mahesh; Sundaram, Ganesh; Rangra, Kamaljit

doi:10.1109/nems.2014.6908777

Cited by 6 publications

(5 citation statements)

References 11 publications

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“…Bansal et al [ 41 ] achieved a high down-state capacitance and a low up-state capacitance using a torsion beam structure, and the switch achieved a very high capacitive ration of 1175. Angira et al [ 42 ] designed a new type of capacitive shunt MEMS switch with float metal layers for the X and K bands and showed a low insertion loss of 0.01–0.11 dB at 1–25 GHz. A low-actuation voltage was achieved in [ 39 , 40 , 42 ] using two actuation electrodes and cantilevers with a low spring constant.…”

Section: The Research Status Of Mems Switches In Different Frequenmentioning

confidence: 99%

“…Angira et al [ 42 ] designed a new type of capacitive shunt MEMS switch with float metal layers for the X and K bands and showed a low insertion loss of 0.01–0.11 dB at 1–25 GHz. A low-actuation voltage was achieved in [ 39 , 40 , 42 ] using two actuation electrodes and cantilevers with a low spring constant. The MEMS switch designed by Singh [ 36 ] achieved a low insertion of 0.1–0.19 dB at 30–75 GHz by covering a metal layer on the dielectric layer and a high isolation of 59 dB at 36 GHz through secondary isolation by using a combination of two bridges in series.…”

Section: The Research Status Of Mems Switches In Different Frequenmentioning

confidence: 99%

“…Angira M et al designed a new type of capacitive shunt MEMS switch for the X and K bands [ 42 ]. The switch structure was implemented with two dissimilar shapes of cantilevers attached to a bridge anchored in between the ground planes of the CPW on either side.…”

Section: The Research Status Of Mems Switches In Different Frequenmentioning

confidence: 99%

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Research and Analysis of MEMS Switches in Different Frequency Bands

Tian

Yuan

2018

Micromachines

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Due to their high isolation, low insertion loss, high linearity, and low power consumption, microelectromechanical systems (MEMS) switches have drawn much attention from researchers in recent years. In this paper, we introduce the research status of MEMS switches in different bands and several reliability issues, such as dielectric charging, contact failure, and temperature instability. In this paper, some of the following methods to improve the performance of MEMS switches in high frequency are summarized: (1) utilizing combinations of several switches in series; (2) covering a float metal layer on the dielectric layer; (3) using dielectric layer materials with high dielectric constants and conductor materials with low resistance; (4) developing MEMS switches using T-match and π-match; (5) designing MEMS switches based on bipolar complementary metal–oxide–semiconductor (BiCMOS) technology and reconfigurable MEMS’ surfaces; (6) employing thermal compensation structures, circularly symmetric structures, thermal buckle-beam actuators, molybdenum membrane, and thin-film packaging; (7) selecting Ultra-NanoCrystalline diamond or aluminum nitride dielectric materials and applying a bipolar driving voltage, stoppers, and a double-dielectric-layer structure; and (8) adopting gold alloying with carbon nanotubes (CNTs), hermetic and reliable packaging, and mN-level contact.

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Section: The Research Status Of Mems Switches In Different Frequenmentioning

confidence: 99%

Section: The Research Status Of Mems Switches In Different Frequenmentioning

confidence: 99%

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Research and Analysis of MEMS Switches in Different Frequency Bands

Tian

Yuan

2018

Micromachines

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“…Some approaches of dielectric materials with high di electric constants to obtain a high capacitance ratio of MEMS switches have been proposed. Dielectric materials include HfO 2 (ε r = 20) [7], STO(ε r = 30-120) [8,9], Ta 2 O 5 (ε r = 32) [10], (Ba,Sr)TiO 3 (ε r > 200) [11], PZT(ε r = 190) [12] and metal-oxide dielectrics with high electrical performance [13]. As a result, the capacitance ratios of the MEMS switches are more than 100 [11,12].…”

Section: Introductionmentioning

confidence: 99%

High on/off capacitance ratio RF MEMS capacitive switches

Wei

Deng

Guo

et al. 2017

J. Micromech. Microeng.

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In this paper, high on/off capacitance ratio radio frequency micro-electro-mechanical-systems (RF MEMS) switches are designed, fabricated, measured and analyzed. Two types of RF MEMS switches, a shunt switch with a contact point and an inline switch without a contact point, are presented. Metal–insulator–metal (MIM) fixed capacitors are used in the MEMS switches. The electrode topologies of RF MEMS switches are analyzed. The parameter λ is defined to describe the relationship between the capacitance ratio, the height of the beam and the actuation voltage. The measured results indicate that, for MEMS switch #1 with a contact point and gap of 1 µm, the insertion loss is better than 0.64 dB up to 40 GHz, and the isolation is more than 20 dB from 11.28 to 30.38 GHz with an actuation voltage of 42 V. For the inline MEMS with a displacement of 1.5 µm, the insertion loss is better than 0.56 dB up to 40 GHz, and the isolation is more than 20 dB from 4.45 to 30.48 GHz with an actuation voltage of 36 V. Circuit models and measured results of the proposed MEMS switches show good agreement. From the fitted results, the on/off capacitance ratio is ~227 for the MEMS switch #1 and ~313 for the MEMS switch #2, respectively. Compared with traditional MEMS capacitive switches with dielectric material Si3N4 and a relatively lower gap (1.5 µm), the proposed MEMS switches exhibit high on/off capacitance ratios.

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“…RF-MEMS technology has paved the way for the development of such devices. Among the different devices, switches have gained higher attention because of their well known advantages over the solid state counterparts [1][2][3][4][5][6][7][8]. However, switch performance requirement becomes more critical when switches are used in large numbers e.g.…”

Section: Introductionmentioning

confidence: 99%

A novel design for low insertion loss, multi-band RF-MEMS switch with low pull-in voltage

Angira

Rangra

2016

Engineering Science and Technology, an International Journal

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A B S T R A C TThis paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, float metal concept is utilized to reduce the RF overlap area between the movable structure and central conductor of CPW for improving the insertion loss of the device. This has been achieved without affecting the downstate response. Further, float metal also makes the down-state behavior predictable in terms of resonant frequency. For reducing the pull-in voltage, the switch is implemented with cantilever type of structure on either side of the transmission line. This structure also has the capability to inductively tune the isolation optimum value to the different bands and thus can be used in the reconfigurable RF systems. The device shows an insertion loss less than 0.10 dB, a return loss below 36.80 dB up to 25 GHz as compared to 1.00 dB insertion, 7.67 dB return loss for the conventional switch. In the OFF state, proposed device shows two isolation peaks i.e. 48.80 dB at 4.5 GHz and 54.56 dB at 9.7 GHz, when either or both cantilevers are electro-statically actuated to the down-state position respectively. The conventional device has a single isolation peak in the X-band. In addition, improvement of around 3 times in the bandwidth has also been achieved. The designed switch can be used at device and sub-system level for the future multiband communication applications.

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A novel interdigitated, inductively tuned, capacitive shunt RF — MEMS switch for X and K bands applications

Cited by 6 publications

References 11 publications

Research and Analysis of MEMS Switches in Different Frequency Bands

Research and Analysis of MEMS Switches in Different Frequency Bands

High on/off capacitance ratio RF MEMS capacitive switches

A novel design for low insertion loss, multi-band RF-MEMS switch with low pull-in voltage

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