Broadband Operation of InGaAsP-InGaAs GRINSCH MQW Amplifiers with 115mW Saturated Output Power

Cooper, D.M.; Bagley, Micaela; Westbrook, L.D.; Elton, David J.; Wickes, H.J.; Harlow, M.J.; Aylett, M.R.; Devlin, William J.

doi:10.1364/ofc.1990.pd32

Search citation statements

Order By: Relevance

Paper Sections

Select...

A Rc1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1990

1995

Publication Types

Select...

Article3

Other1

Book1

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 5 publications

(1 citation statement)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The values for TWAs are about 20 dB larger than those for FPAs. The largest P3db of 20.6 dBm was obtained by a multiquantum-well (MQW) amplifier [40]. material on the gain coefficient for different concentrations of the p-type dopant [35].…”

Section: A Rcmentioning

confidence: 99%

Traveling-wave semiconductor laser amplifiers for optical communications systems

Saitoh

Mukai

[Proceedings] GLOBECOM '90: IEEE Global Telecommunications Conference and Exhibition

View full text Add to dashboard Cite

Abstruct-Optical amplification is a key technology for future optical communications systems. The latest state of the art for semiconductor laser amplifiers (SLAs) is reviewed, as well as future possibilities for SLAs. Design criteria for improving SLA characteristics are clarified from the viewpoint of both material gain parameters and amplifier operating conditions. The most essential amplifier characteristics for the communications system application are high saturation power and small noise figure, which are achieved by traveling-wave semiconductor laser amplifiers (TWAs). In order to fabricate TWAs, anti-reflection (AR) coating, angled facet structures and window facet structures have been studied to reduce facet reflection.

show abstract

Section: A Rcmentioning

confidence: 99%