“…Several different material platforms have been investigated in the last years for photonic integrated circuits [20][21][22][23], and the quest is still open for the perfect material for future all-optical networks and applications. A non-comprehensive list includes semiconductors, such as silicon [24,25] and GaAs/AlGaAs (see, e.g., [26]), as well as nonlinear glasses, such as chalcogenide [27], silicon oxynitride [28] and bismuth oxides [29].…”
We review our recent progresses on frequency conversion in integrated devices, focusing primarily on experiments based on strip-loaded and quantum-well intermixed AlGaAs waveguides, and on CMOS-compatible high-index doped silica glass waveguides. The former includes both second-and third-order interactions, demonstrating wavelength 2 conversion by tunable difference-frequency generation over a bandwidth of more than 100 nm, as well as broadband self-phase modulation and tunable four-wave mixing. The latter includes four-wave mixing using low-power continuous-wave light in microring resonators as well as hyper-parametric oscillation in a high quality factor resonator, towards the realization of an integrated multiple wavelength source with important applications for telecommunications, spectroscopy, and metrology.
“…Several different material platforms have been investigated in the last years for photonic integrated circuits [20][21][22][23], and the quest is still open for the perfect material for future all-optical networks and applications. A non-comprehensive list includes semiconductors, such as silicon [24,25] and GaAs/AlGaAs (see, e.g., [26]), as well as nonlinear glasses, such as chalcogenide [27], silicon oxynitride [28] and bismuth oxides [29].…”
We review our recent progresses on frequency conversion in integrated devices, focusing primarily on experiments based on strip-loaded and quantum-well intermixed AlGaAs waveguides, and on CMOS-compatible high-index doped silica glass waveguides. The former includes both second-and third-order interactions, demonstrating wavelength 2 conversion by tunable difference-frequency generation over a bandwidth of more than 100 nm, as well as broadband self-phase modulation and tunable four-wave mixing. The latter includes four-wave mixing using low-power continuous-wave light in microring resonators as well as hyper-parametric oscillation in a high quality factor resonator, towards the realization of an integrated multiple wavelength source with important applications for telecommunications, spectroscopy, and metrology.
“…low power values and short propagation lengths) of some fundamental operations requiring nonlinear optical phenomena, such as frequency conversion schemes and switching (Agrawal, 2006). Several alternative material platforms have been developed for photonic integrated circuits Alduino & Panicia, 2007;Koch & Koren, 1991;Little & Chu, 2000), including semiconductors such as AlGaAs and silicon-on-insulator (SOI) (Lifante, 2003;Koch and Koren, 1991;Tsybeskov et al, 2009;Jalali & Fathpour, 2006), as well as nonlinear glasses such as chalcogenides, silicon oxynitride and bismuth oxides Eggleton et al, 2008;Lee et al, 2005). In addition, exotic and novel manufacturing processes have led to new and promising structures in these materials and in regular silica fibers.…”
“…To date, monolithic integration on an indium phosphide (InP) substrate is the most promising way of making PICs because it has the capability to integrate both active and passive optical functions required in optical transport systems for the 1.3-um or 1.55-um telecom window. To develop large-scale, InPbased monolithic PICs, various planar optical devices such as lasers, modulators, detectors, multiplexers/demultiplexers, and optical amplifiers have been developed [1][2][3][4]. This paper provides an overview of the present state of research on waveguide optical isolators for InP-based monolithic PICs.…”
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