Integrated Optoelectronics 1995
DOI: 10.1016/b978-0-12-200420-9.50019-6
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Photonic Integrated Circuits

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“…There, electroluminescence is narrowest (2%) at 550 nm thanks to the absence of doping but degrades to 3% at 625 nm, for the most luminous red LED's, for which doping is needed. The most classical III-V system is (GaAl)As, [15]- [18], [20]. Addition of indium in the wells allows up to 1-m wavelengths.…”
Section: Results For Existing Led Materials Systems and Discussionmentioning
confidence: 99%
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“…There, electroluminescence is narrowest (2%) at 550 nm thanks to the absence of doping but degrades to 3% at 625 nm, for the most luminous red LED's, for which doping is needed. The most classical III-V system is (GaAl)As, [15]- [18], [20]. Addition of indium in the wells allows up to 1-m wavelengths.…”
Section: Results For Existing Led Materials Systems and Discussionmentioning
confidence: 99%
“…The long-wavelength phosphide-based quaternaries grown on InP (1.3 and 1.55 m) [16]- [18], of importance for fiberbased and eye-safe applications, offer less obvious prospects, because they combine low refractive index contrast ( 0.2-0.25) and linewidths of 80-120 nm: these latter broaden with increasing injection level, which is often used to improve the LED's speed parameters, as discussed below.…”
Section: Results For Existing Led Materials Systems and Discussionmentioning
confidence: 99%