Broadband Black‐Phosphorus Photodetectors with High Responsivity

Huang, Mingqiang; Wang, Mingliang; Cheng, Chen; Ma, Zongwei; Li, Xuefei; Han, Junbo; Wu, Yanqing

doi:10.1002/adma.201506352

Cited by 396 publications

(312 citation statements)

References 49 publications

(70 reference statements)

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“…In addition, the other important optoelectronic parameters,38, 39, 40 such as detectivity and external quantum efficiency, were also extracted from the photodetectors fabricated on the ReS 2 , ReSe 2 , and ReS 2 /ReSe 2 heterojunctions; the plotted data is provided in the Supporting Information chapter (Figure S5, Supporting Information). Finally, for performance comparison of the gate‐controllable ReS 2 /ReSe 2 heterojunction photodetector with other devices, we plotted the photoresponsivity values obtained in this study and previous studies for vdW photodetectors4, 5, 6, 7, 8, 9, 10, 11, 13, 23, 41, 42, 43 in Figure 4k. Our gate‐controllable ReS 2 /ReSe 2 heterojunction photodetector (blue dotted line) exhibited relatively high photoresponsivity values over a broad range of wavelengths, compared to other vdW photodetectors.…”

Section: Resultsmentioning

confidence: 96%

“…Since the graphene photodetector was first implemented in 2009,1 various van der Waals (vdW) materials, such as graphene,1, 2, 3, 4 transition metal dichalcogenides (TMDs),5, 6, 7, 8, 9, 10, 11, 12 and black phosphorus (BP),13, 14, 15 have been utilized to achieve high‐performance photodetectors with high photoresponsivity and a wide detection range. In the early graphene‐based photodetectors, photodetection in a wide range from ultraviolet to terahertz wavelengths was possible, owing to the zero‐bandgap nature of graphene 16.…”

Section: Introductionmentioning

confidence: 99%

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Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

Lee

Shim

et al. 2018

Advanced Science

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In recent years, various van der Waals (vdW) materials have been used in implementing high‐performance photodetectors with high photoresponsivity over a wide detection range. However, in most studies reported so far, photodetection in the infrared (IR) region has not been achieved successfully. Although several vdW materials with narrow bandgaps have been proposed for IR detection, the devices based on these materials exhibit notably low photoresponsivity under IR light illumination. Here, highly efficient near‐infrared (NIR) photodetection based on the interlayer optical transition phenomenon in a vdW heterojunction structure consisting of ReS2 and ReSe2 is demonstrated. In addition, by applying the gate‐control function to the two‐terminal vdW heterojunction photodetector, the photoresponsivity is enhanced to 3.64 × 105 A W−1 at λ = 980 nm and 1.58 × 105 A W−1 at λ = 1310 nm. Compared to the values reported for previous vdW photodetectors, these results are the highest levels of photoresponsivity in the NIR range. The study offers a novel device platform for achieving high‐performance IR photodetectors.

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Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

Lee

Shim

et al. 2018

Advanced Science

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“…85 Phosphorene-based device structures show high photosensitivity and high-performance broad spectral range photodetectors have been demonstrated. 90 Solar cells have also been suggested, as energy conversion efficiencies as high as 20% have been predicted for heterojunctions involving phosphorene with hydrogen and fluorine. 91 Experimentaly, first in-plane p-p junctions have recently been fabricated using chemical doping and its considerable performance has been shown.…”

Section: Applications Of Phosphorene Electronic Devices and Sensorsmentioning

confidence: 99%

Recent advances in synthesis, properties, and applications of phosphorene

et al. 2017

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Since its first fabrication by exfoliation in 2014, phosphorene has been the focus of rapidly expanding research activities. The number of phosphorene publications has been increasing at a rate exceeding that of other two-dimensional materials. This tremendous level of excitement arises from the unique properties of phosphorene, including its puckered layer structure. With its widely tunable band gap, strong in-plane anisotropy, and high carrier mobility, phosphorene is at the center of numerous fundamental studies and applications spanning from electronic, optoelectronic, and spintronic devices to sensors, actuators, and thermoelectrics to energy conversion, and storage devices. Here, we review the most significant recent studies in the field of phosphorene research and technology. Our focus is on the synthesis and layer number determination, anisotropic properties, tuning of the band gap and related properties, strain engineering, and applications in electronics, thermoelectrics, and energy storage. The current needs and likely future research directions for phosphorene are also discussed. , there has been a quest for new two-dimensional (2D) materials aimed at fully exploring new fundamental phenomena stemming from quantum confinement and size effects. This quest has spurred new areas of research with rapid growth from both theoretical and experimental fronts aimed at technological advancements. Among recently discovered 2D materials, phosphorene is one of the most intriguing due to its exotic properties and numerous foreseeable applications.2 This review discusses recent advances in phosphorene research with special emphasis on: (i) fabrication and techniques for rapid identification of the number of layers; (ii) anisotropic behavior; (iii) band gap and property tuning; (iv) strain engineering and mechanical properties; (v) devices and applications; and (vi) future directions.2D materials composed of a single-atom-thick or a singlepolyhedral-thick layer can be grouped into diverse categories.

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“…Owning to the existence of a thickness dependent band gap1, high carrier mobility23, strong exciton binding energies4, and extraordinary thermoelectric properties56, layered black phosphorus has proven to be a potential candidate for device applications. Various reports have shown exceptional optical properties, optoelectronic properties, and photoresponse performance of black phosphorus thin film devices789101112131415. However, a major obstacle facing black phosphorus devices is the noticeable fast photo-reaction to ambient environment, which forms oxidized black phosphorus, resulting in degraded device performance.…”

mentioning

confidence: 99%

Raman Sensitive Degradation and Etching Dynamics of Exfoliated Black Phosphorus

Alsaffar

Alodan

Alrasheed

et al. 2017

Sci Rep

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Layered black phosphorus has drawn much attention due to the existence of a band gap compared to the widely known graphene. However, environmental stability of black phosphorus is still a major issue, which hinders the realization of practical device applications. Here, we spatially Raman map exfoliated black phosphorus using confocal fast-scanning technique at different time intervals. We observe a Raman intensity modulation for , B2g, and modes. This Raman modulation is found to be caused by optical interference, which gives insights into the oxidation mechanism. Finally, we examine the fabrication compatible PMMA coating as a viable passivation layer. Our measurements indicate that PMMA passivated black phosphorus thin film flakes can stay pristine for a period of 19 days when left in a dark environment, allowing sufficient time for further nanofabrication processing. Our results shed light on black phosphorus degradation which can aid future passivation methods.

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Broadband Black‐Phosphorus Photodetectors with High Responsivity

Cited by 396 publications

References 49 publications

Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

Recent advances in synthesis, properties, and applications of phosphorene

Raman Sensitive Degradation and Etching Dynamics of Exfoliated Black Phosphorus

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