Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

Jo, Seo-Hyeon; Lee, Hae Won; Shim, Jaewoo; Heo, Keun; Kim, Minwoo; Song, Young Jae; Park, Jin‐Hong

doi:10.1002/advs.201700423

Cited by 71 publications

(60 citation statements)

References 43 publications

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“…Conduction band minimum of BP (ReS 2 ), valence band maximum, and bandgap are 4.2 eV (4.4 eV), 4.59 eV (5.73 eV), and 0.39 eV (1.33 eV), which are based on previous calculations . Fermi level of BP (ReS 2 ) can be measured through experimentation and is 4.5 eV (4.57 eV) . These data shown in Figure a demonstrate energy band alignment of isolated BP and ReS 2 .…”

Section: Resultssupporting

confidence: 70%

Polarization‐Dependent Photocurrent of Black Phosphorus/Rhenium Disulfide Heterojunctions

Gao

et al. 2018

Adv Materials Inter

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as diodes, [18,19] photodetectors, [20] and memory devices. [21,22] However, the stacking of many heterojunctions simply focuses on the stacking of different materials and seldom mentions anisotropy of the material itself. Considering the anisotropy of the materials during stacking, a heterojunction with excellent properties may be obtained. A series of works in anisotropic materials has been explored, including photothermal detection, determination of crystalline orientation, and diodes. [23][24][25][26] These results have laid the foundation for using the anisotropy of materials to investigate functional devices. BP is a p-type semiconducting 2D material that can be used as a channel material in field-effect transistors (FETs) with hole mobility up to ≈1000 cm 2 V −1 s −1 . [2] The small and direct bandgap makes BP as an ideal material for broadband photodetection. Further, the BP FETs show a fast photoresponse to excitation wavelengths from the visible region to near-infrared region, indicating BP as a promising material for high-speed broadband photodetector. [27] What is more, BP exhibits an anisotropic optical response due to the existence of strong in-plane anisotropy, [28,29] and thus detection of light polarization can be achieved. ReS 2 is an n-type semiconductor, and also have anisotropic carrier transport and optical property. [30] Thus, it is expected to obtain a stronger polarized photoresponse through the formation of a p-n junction with BP and ReS 2 .In this paper, we designed heterojunctions with the b-axis of ReS 2 parallel to the crystal orientation of BP, due to the stronger optical absorption of the b-axis of ReS 2 . [31] The p-n junction with BP and ReS 2 shows a better polarization-dependent photoresponse than individual BP or ReS 2 . Here, we investigated variations in photocurrent with linear polarized light for these orientation-induced heterojunctions. Two types of heterojunctions were fabricated with the direction of armchair (AC) and zigzag (ZZ) parallel to the b-axis of ReS 2 , and the maximum photocurrent ratio of two polarization directions with parallel to AC and ZZ of BP can reach 31 at gate voltage of 0 V with V ds = −1 V. Based on the strong polarization-dependent characteristic of BP/ReS 2 heterojunction with AC direction parallel to the b-axis of ReS 2 , a photodetector is provided to apply in polarization optoelectronic detection.Van der Waals (vdW) heterojunctions of 2D layered materials possess excellent interface quality without the constraint of lattice mismatch, which enables the application of nanomaterials in electronic and optoelectronic devices. The anisotropy of 2D materials however, also plays an important role in the stacking process of vdW heterojunction. Black phosphorus (BP) and rhenium disulfide (ReS 2 ), as two strong anisotropic 2D materials, have intrinsic in-plane anisotropic properties that can be used in polarization-sensitive photoelectric devices. Herein, two types of BP/ReS 2 heterojunctions are stacked by controlling their crystal orientation, with ...

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Section: Resultssupporting

confidence: 70%

Polarization‐Dependent Photocurrent of Black Phosphorus/Rhenium Disulfide Heterojunctions

Gao

et al. 2018

Adv Materials Inter

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“…A smaller barrier height was obtained at higher V bg , approaching 30 meV at V bg = −6 V and becoming negligible at V bg = 6 V. Notably, we identified deviations of the derived Schottky barrier height in the small currents for −2 V < V bg < 1 V. On the basis of our temperature‐dependent analysis, the graphene contacts show good tunable barrier height characteristics. This tunability resulted in a much lower contact Schottky barrier height and clear ambipolarity in charge transport compared with metal contact cases published in previous studies …”

Section: Resultsmentioning

confidence: 79%

Analog Circuit Applications Based on All‐2D Ambipolar ReSe₂ Field‐Effect Transistors

Lee

Yang

Sung

et al. 2019

Adv Funct Materials

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Complementary circuits based on 2D materials show great promise for nextgeneration electronics. An ambipolar all-2D ReSe 2 field-effect transistor (FET) with a hexagonal boron nitride gate dielectric is fabricated and its electronic characteristics are comprehensively studied by temperature dependence and noise measurements. Ambipolar transfer characteristics are achieved owing to the tunable Fermi level of the graphene contact and negligible and 30 meV Schottky barrier heights for the n-and p-channel regimes, respectively. An inverter is also fabricated to demonstrate ambipolar ReSe 2 FET operation in a logic circuit. Furthermore, a p/n switchable unipolar FET is designed and shows potential for building complimentary circuits from a signal device. This work demonstrates the potential of all-2D ReSe 2 FETs and makes available new approaches for designing next-generation devices.

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“…In the case of the photoresponse time for Type (3) and Type (6), as shown in Fig. 4h, it was also decreased with the increase of wavelength for both types and, especially, for Type (6), the rise time/decay time were the shortest [5 ms/10 ms] at 1064 nm because the photocarriers detected at the NIR range are dependent on interlayer gap not on band-to-band transition 52 . In addition, as shown in Fig.…”

Section: Resultsmentioning

confidence: 88%

Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction

Kim

et al. 2019

Nat Commun

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The recent reports of various photodetectors based on molybdenum disulfide (MoS2) field effect transistors showed that it was difficult to obtain optoelectronic performances in the broad detection range [visible–infrared (IR)] applicable to various fields. Here, by forming a mono-/multi-layer nano-bridge multi-heterojunction structure (more than > 300 junctions with 25 nm intervals) through the selective layer control of multi-layer MoS2, a photodetector with ultrasensitive optoelectronic performances in a broad spectral range (photoresponsivity of 2.67 × 106 A/W at λ = 520 nm and 1.65 × 104 A/W at λ = 1064 nm) superior to the previously reported MoS2-based photodetectors could be successfully fabricated. The nano-bridge multi-heterojunction is believed to be an important device technology that can be applied to broadband light sensing, highly sensitive fluorescence imaging, ultrasensitive biomedical diagnostics, and ultrafast optoelectronic integrated circuits through the formation of a nanoscale serial multi-heterojunction, just by adding a selective layer control process.

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Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

Cited by 71 publications

References 43 publications

Polarization‐Dependent Photocurrent of Black Phosphorus/Rhenium Disulfide Heterojunctions

Polarization‐Dependent Photocurrent of Black Phosphorus/Rhenium Disulfide Heterojunctions

Analog Circuit Applications Based on All‐2D Ambipolar ReSe₂ Field‐Effect Transistors

Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction

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Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

Cited by 71 publications

References 43 publications

Polarization‐Dependent Photocurrent of Black Phosphorus/Rhenium Disulfide Heterojunctions

Polarization‐Dependent Photocurrent of Black Phosphorus/Rhenium Disulfide Heterojunctions

Analog Circuit Applications Based on All‐2D Ambipolar ReSe2 Field‐Effect Transistors

Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction

Contact Info

Product

Resources

About

Analog Circuit Applications Based on All‐2D Ambipolar ReSe₂ Field‐Effect Transistors