Polarization‐Dependent Photocurrent of Black Phosphorus/Rhenium Disulfide Heterojunctions

Abstract

as diodes, [18,19] photodetectors, [20] and memory devices. [21,22] However, the stacking of many heterojunctions simply focuses on the stacking of different materials and seldom mentions anisotropy of the material itself. Considering the anisotropy of the materials during stacking, a heterojunction with excellent properties may be obtained. A series of works in anisotropic materials has been explored, including photothermal detection, determination of crystalline orientation, and diodes. [23][24][25][26] These results have laid the foundation for using the anisotropy of materials to investigate functional devices. BP is a p-type semiconducting 2D material that can be used as a channel material in field-effect transistors (FETs) with hole mobility up to ≈1000 cm 2 V −1 s −1 . [2] The small and direct bandgap makes BP as an ideal material for broadband photodetection. Further, the BP FETs show a fast photoresponse to excitation wavelengths from the visible region to near-infrared region, indicating BP as a promising material for high-speed broadband photodetector. [27] What is more, BP exhibits an anisotropic optical response due to the existence of strong in-plane anisotropy, [28,29] and thus detection of light polarization can be achieved. ReS 2 is an n-type semiconductor, and also have anisotropic carrier transport and optical property. [30] Thus, it is expected to obtain a stronger polarized photoresponse through the formation of a p-n junction with BP and ReS 2 .In this paper, we designed heterojunctions with the b-axis of ReS 2 parallel to the crystal orientation of BP, due to the stronger optical absorption of the b-axis of ReS 2 . [31] The p-n junction with BP and ReS 2 shows a better polarization-dependent photoresponse than individual BP or ReS 2 . Here, we investigated variations in photocurrent with linear polarized light for these orientation-induced heterojunctions. Two types of heterojunctions were fabricated with the direction of armchair (AC) and zigzag (ZZ) parallel to the b-axis of ReS 2 , and the maximum photocurrent ratio of two polarization directions with parallel to AC and ZZ of BP can reach 31 at gate voltage of 0 V with V ds = −1 V. Based on the strong polarization-dependent characteristic of BP/ReS 2 heterojunction with AC direction parallel to the b-axis of ReS 2 , a photodetector is provided to apply in polarization optoelectronic detection.Van der Waals (vdW) heterojunctions of 2D layered materials possess excellent interface quality without the constraint of lattice mismatch, which enables the application of nanomaterials in electronic and optoelectronic devices. The anisotropy of 2D materials however, also plays an important role in the stacking process of vdW heterojunction. Black phosphorus (BP) and rhenium disulfide (ReS 2 ), as two strong anisotropic 2D materials, have intrinsic in-plane anisotropic properties that can be used in polarization-sensitive photoelectric devices. Herein, two types of BP/ReS 2 heterojunctions are stacked by controlling their crystal orientation, with ...

Molecular Doping of 2D Indium Selenide for Ultrahigh Performance and Low‐Power Consumption Broadband Photodetectors

“…have been widely reported in the literature, only two recent papers reported BP-based heterostructure with InSe which unfortunately did not demonstrate reliable high-performance photodetectors as other 2D materials. [44][45][46][47][48] This is achieved here, where we first focus on the dielectric engineering of the BP-InSe heterostructure showing evident performance enhancement of the P-N junction, as discussed in detail in Supporting Note 5 and Figures S25 and S26, Supporting Information.…”

A gate-tunable symmetric bipolar junction transistor fabricatedviafemtosecond laser processing

“…† Next, the MoS 2 ake was used to bridge the two BP pieces using a dry-transfer technique, which was reported in our previous studies. [45][46][47] Subsequently, the hBN ake was transferred onto the le BP ake in the same way as the top gate dielectric. Finally, 50 nm thick Au electrodes were patterned and deposited using photolithography and magnetron sputtering, respectively.…”

“…Scanning photocurrent images (SPI) were used to determine the mechanism governing photocurrent amplication in the SBJT, which was reported in our previous studies. [45][46][47] These results illustrate a novel, convenient method for fabricating multifunctional heterostructure devices.…”

Recent Progress in Anisotropic 2D Semiconductors: From Material Properties to Photoelectric Detection

“…Anisotropic 2D materials mainly include black phosphorus (BP), low‐symmetry transition metal dichalcogenides (1 T′ MoTe 2 , [ 9 ] ReS 2 , [ 26 ] and ReSe 2 [ 29 ] ), group IV–group V compounds (GeAs and GeAs 2 ), and group IV–group VI compounds (GeS 2 , [ 36 ] GeSe, [ 37,38 ] GeSe 2 , [ 39 ] and SnSe [ 40 ] ). Interestingly, anisotropic heterojunctions (such as BP–ReS 2 , [ 26,41 ] BP–InSe, [ 42 ] GaTe–InSe, [ 43 ] BP–WSe 2 , [ 44 ] and so on) can form by the combination of these materials.…”