Broadband BGA-Via Transitions for Reliable RF/Microwave LTCC-SiP Module Packaging

Kangasvieri, T.; Halme, Jari; Vähäkangas, Jouko; Lahti, Markku

doi:10.1109/lmwc.2007.911986

Cited by 27 publications

(16 citation statements)

References 7 publications

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“…[1][2][3][4] In addition, LTCC substrates have stable dielectric properties in harsh environments, which is an essential requirement for many automotive and industrial automation applications. 5 However, the thermal fatigue endurance of the second-level solder joints (i.e., the joints between the ceramic module and the organic motherboard) is often diminished because of the high stress level of the joints in test/ field conditions, since the global thermal mismatch between most LTCC tape systems and printed wiring boards (PWBs) is usually more than 10 ppm/°C.…”

Section: Introductionmentioning

confidence: 99%

Thermal Fatigue Endurance of Lead-Free Composite Solder Joints over a Temperature Range of −55°C to 150°C

Nousiainen

Kangasvieri

Rautioaho

et al. 2009

Journal of Elec Materi

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The thermal fatigue endurance of two lead-free solder/plastic-core solder ball (PCSB) composite joint structures in low-temperature co-fired ceramic (LTCC) modules was investigated using a thermal cycling test over a temperature range of À55°C to 150°C. The investigated solder alloys were Sn-7In-4.1Ag-0.5Cu (SAC-In) and 95.5Sn-4Ag-0.5Cu (SAC). Three failure mechanisms were observed in the test joints. Transgranular (fatigue) cracking mixed with minor intergranular cracking was the dominant failure mechanism at the outer edge of the joints in both test assemblies, whereas separation of the solder/intermetallic compound (IMC) interface and creep cracking occurred in the other parts of the test joints. The propagation rate of the transgranular crack was lower in the SAC-In joints compared with in the SAC joints. Furthermore, the SAC solder seemed to be more prone to separation of the solder/IMC interface, and more severe intergranular (creep) cracking occurred in it compared with in the SAC-In solder. In the thermal cycling test conditions, the better thermal fatigue endurance of the SAC-In solder composite joints resulted in a 75% higher characteristic lifetime compared with the SAC composite joints.

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Section: Introductionmentioning

confidence: 99%

Thermal Fatigue Endurance of Lead-Free Composite Solder Joints over a Temperature Range of −55°C to 150°C

Nousiainen

Kangasvieri

Rautioaho

et al. 2009

Journal of Elec Materi

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“…Most of the chip-on-board, flip-chip, and 3D through silicon via (TSV) research that exists in the literature is targeted toward low power microelectronics or sensor applications [39][40][41][42][43][44]. Low power RF circuits have also adopted wire bondless BGA-based packaging methods as state-of-the-art due to the parasitic reduction offered by such 3D integration schemes, reduced cost, and reliability benefits [45][46][47][48]. There is also a wealth of literature in support of the favorable aspects of BGAs.…”

Section: D Integration Effortsmentioning

confidence: 99%

High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

Seal

Mantooth

2017

Energies

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This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology barriers preventing SiC power devices from performing to their fullest ability were identified. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were described, and the concept for a novel SiC power module was discussed.

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“…With reflection questions for via and solder ball continuous research and improvement, foreign scholars have proposed a variety of new via structure, from a single via model to the many vias transition model [4] , even Though Silicon Via fault model [5] . Research on the BGA solder ball from a single analysis to the grounding solder ball shielding [6] , and even differential solder balls performance [7] . Domestic interconnect structure for electromagnetic analysis is still in the research methods of follow up abroad, more concerned about the manufacturing processes and materials but the research about the effect of the discontinuous region size on reflection is relatively little.…”

Section: Signal Integritymentioning

confidence: 99%

Analysis transmission performance of complex interconnect structure and equivalent circuit

Shang¹,

Ma²,

Li³

2015

Proceedings of the 2015 International Power, Electronics and Materials Engineering Conference

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Abstract. The signal integrity problem has become a limit on current electronic system design and development. This paper studies the transmission performance for high-speed PCB complex interconnect structural model consists of via, solder ball and trace. Different length of traces and different radius of pads were simulated using HFSS to evaluate the effect of these parameters on the transmission characteristic. An equivalent circuit model of the complex interconnect structure was presented and the parameters values were extracted. The circuit model was simulated using the software ADS, compared to the results simulated using HFSS, the differences of return loss S11were within 1dB ranging from 1GHz to 6GHz, and within 2dB ranging from 6GHz to 10GHz.

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Broadband BGA-Via Transitions for Reliable RF/Microwave LTCC-SiP Module Packaging

Cited by 27 publications

References 7 publications

Thermal Fatigue Endurance of Lead-Free Composite Solder Joints over a Temperature Range of −55°C to 150°C

Thermal Fatigue Endurance of Lead-Free Composite Solder Joints over a Temperature Range of −55°C to 150°C

High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

Analysis transmission performance of complex interconnect structure and equivalent circuit

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