High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

Abstract

This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology barriers preventing SiC power devices from performing to their fullest ability were identified. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were described, and the concept for a novel SiC power module was discussed.

Enhanced thermal stability by introducing TiN diffusion barrier layer between W and SiC

“…Silicon carbide (SiC) is a refractory compound semiconductor material that has many unique and desirable electrical, mechanical, and chemical properties including high melting point, low density, good mechanical behavior, resistance to oxidation at high temperature and chemical inertness to corrosive media. In addition to its application in high power electronic devices with the ability to operate at temperatures as high as 600°C, [1][2][3] SiC has several other high temperature applications including nuclear materials, [4][5][6] reinforced composites, 7 and the hot cell of thermionic energy converters. 8,9 Tungsten (W) is one of the preferred ohmic contact metals on SiC for semiconductor device applications due to its high melting point (3400°C), high temperature stability, inherent heat resistance, and high thermal conductivity, as well as excellent corrosion and abrasion resistance.…”

Application of the PCB-Embedding Technology in Power Electronics – State of the Art and Proposed Development

“…The next driver for progress is considered to be integration and packaging [1], [5]- [8]. Future packaging technologies should offer better electrical and thermal performances, low cost, and should be able to manage the complexity of the multi-cellular approaches.…”

Emerging Trends in Silicon Carbide Power Electronics Design

“…The higher operating temperature afforded by next-generation power semiconductors can reduce the cooling requirements, thereby reducing the overall size and weight of a system. Likewise, higher switching frequencies offered by these devices directly correlates to a reduction in both the size and weight of system-level passive components [12], [22]. Furthermore, integration of some of these passive components inside the module can have a profound impact on power density.…”

“…Research in this area by incorporating 3D packaging techniques has shown reduction in EMI as well as the benefits associated with a 3D structure. These include higher power density and the possibility for double-sided cooling [22], [26], [27]. Fig.…”

“…The high operating frequency of WBG devices along with their high slew rates can lead to scenarios where a high di/dt leads to large voltage overshoots during switching transients. This overshoot reduces the safe operating area of the module and is a contributor to EMI issues [22], [24]. Additionally, gate-loop inductance limits the gate-source voltage rise and fall times which, in turn, increases transient duration and switching losses [25].…”