Boride-enhanced diffusion in silicon: Bulk and surface layers

Cowern, N.E.B.; Theunissen, M. J. J.; Roozeboom, F.; Berkum, J. G. M. van

doi:10.1063/1.124312

Cited by 38 publications

(20 citation statements)

References 12 publications

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“…This result suggests that a mechanism involving point defect generation is not prevalent in boron deactivation. Alternatively, the small number of interstitials could be related to the phenomenon of boronenhanced diffusion 39,40 and the kick out of an interstitial when mobile B i returns to a substitutional lattice site. In his modeling of the precipitation of boron, Landi 26,27 assumed a constant density of precipitates.…”

Section: Resultsmentioning

confidence: 99%

Physical processes associated with the deactivation of dopants in laser annealed silicon

Takamura

Griffin

Plummer

2002

Journal of Applied Physics

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Articles you may be interested inIncorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing J. Appl. Phys. 102, 093717 (2007); 10.1063/1.2812565 Groups III and V impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals Appl. Phys. Lett. 89, 071915 (2006); 10.1063/1.2337081 Dopant deactivation in heavily Sb doped Si (001): A high-resolution x-ray diffraction and transmission electron microscopy studyLaser annealing is being investigated as an alternative method to activate dopants and repair the lattice damage from ion implantation. The unique properties of the laser annealing process allow for active dopant concentrations that exceed equilibrium solubility limits. However, these super-saturated dopant concentrations exist in a metastable state and deactivate upon subsequent thermal processing. Previously, this group compared the electrical characteristics of the deactivation behavior of common dopants ͑P, B, and Sb͒ across a range of concentrations and annealing conditions. Boron and antimony were shown to be stable species against deactivation while P and As deactivate quickly at temperatures as low as 500°C. In this work, we present additional data to understand the underlying physical mechanisms involved in the deactivation process. It is proposed that As and P deactivate through the formation of small dopant-defect clusters while B and Sb deactivate through precipitation.

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Section: Resultsmentioning

confidence: 99%

Physical processes associated with the deactivation of dopants in laser annealed silicon

Takamura

Griffin

Plummer

2002

Journal of Applied Physics

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“…Two interstitial-mediated diffusion mechanisms, the kick-out mechanism [Cowern, 1999] (Equation 3.1) and the interstitialcy mechanism [Sadigh, 1999;Windl, 1999] (Equation 3.2) have been proposed for B diffusion in Si:…”

Section: Experimental Approach and Resultsmentioning

confidence: 99%

Diffusion in silicon isotope heterostructures

Silvestri¹

2004

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The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and 28 Si enriched layers, enables the observation of 30 Si self-diffusion from the natural layers into the 28 Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and selfdiffusion.The simultaneously recorded diffusion profiles enabled the modeling of the coupled dopant and self-diffusion. From the modeling of the simultaneous diffusion, the dopant diffusion mechanisms, the native defect charge states, and the self-and dopant diffusion coefficients can be determined. This information is necessary to enhance the physical modeling of dopant diffusion in Si. It is of particular interest to the modeling of pushing me to achieve. I am grateful to Ana for her unwavering love and support, for giving me the time during this busy year to write this thesis, but also for knowing when I need a break.

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“…Two interstitial mediated diffusion mechanisms, the kick-out mechanism [13] (Eq. 1) and the interstitialcy mechanism [14,15] (Eq.…”

Section: Resultsmentioning

confidence: 99%

Self- and Dopant Diffusion in Extrinsic Boron Doped Isotopically Controlled Silicon Multilayer Structures

et al. 2002

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Isotopically controlled silicon multilayer structures were used to measure the enhancement of self-and dopant diffusion in extrinsic boron doped silicon. 30 Si was used as a tracer through a multilayer structure of alternating natural Si and enriched 28 Si layers. Low energy, high resolution secondary ion mass spectrometry (SIMS) allowed for simultaneous measurement of self-and dopant diffusion profiles of samples annealed at temperatures between 850 o C and 1100°C. A specially designed ion-implanted amorphous Si surface layer was used as a dopant source to suppress excess defects in the multilayer structure, thereby eliminating transient enhanced diffusion (TED) behavior. Self-and dopant diffusion coefficients, diffusion mechanisms, and native defect charge states were determined from computer-aided modeling, based on differential equations describing the diffusion processes. We present a quantitative description of B diffusion enhanced self-diffusion in silicon and conclude that the diffusion of both B and Si is mainly mediated by neutral and singly positively charged self-interstitials under p-type doping. No significant contribution of vacancies to either B or Si diffusion is observed.

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Boride-enhanced diffusion in silicon: Bulk and surface layers

Cited by 38 publications

References 12 publications

Physical processes associated with the deactivation of dopants in laser annealed silicon

Physical processes associated with the deactivation of dopants in laser annealed silicon

Diffusion in silicon isotope heterostructures

Self- and Dopant Diffusion in Extrinsic Boron Doped Isotopically Controlled Silicon Multilayer Structures

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