Self- and Dopant Diffusion in Extrinsic Boron Doped Isotopically Controlled Silicon Multilayer Structures

Sharp, Ian; Bracht, H.; Silvestri, Hughes H.; Nicols, Samuel P.; Beeman, J. W.; Hansen, J. Lundsgaard; Larsen, A. Nylandsted; Häller, E. E.

doi:10.1557/proc-719-f13.11

Cited by 9 publications

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References 15 publications

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“…As an example on the diffusion behavior of dopants in Si experimental profiles obtained after dopant diffusion in isotopically controlled Si heterostructures are shown [64,[137][138][139]. These concurrent self-and dopant diffusion experiments reveal the impact of both point-defect reactions and doping on self-and dopant diffusion.…”

Section: Experimental Diffusion Profilesmentioning

confidence: 86%

“…By means of such isotopically controlled heterostructures not only self-diffusion experiments in Si and Ge could be performed over a wide range of temperatures but also the impact of dopant diffusion on self-diffusion could be investigated directly [137][138][139][140][141]. Modeling of the simultaneous self-and dopant diffusion is a bit more complex than modeling of the separate processes but is a worthwhile effort because more information about the underlying mechanisms and properties of the point defects is obtained than from self-and dopant diffusion experiments studied separately [64,75].…”

Section: Dopant Diffusion Via the Dissociative Mechanismmentioning

confidence: 99%

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Diffusion and Point Defects in Silicon Materials

Bracht

2015

Lecture Notes in Physics

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This chapter aims to provide a basic understanding on the complex diffusion behavior of self-, dopant-, and selected metal atoms in silicon (Si). The complexity of diffusion in Si becomes evident in the shape of self-and foreign-atom diffusion profiles that evolves under specific experimental conditions. Diffusion studies attempt to determine from the diffusion behavior not only the mechanisms of atomic transport but also the type of the point defects involved. This information is of pivotal interest to control the diffusion and activation of dopants during the fabrication of Si-based devices and, from a more fundamental scientific point of view, for comparison to the predictions of theoretical calculations on the properties of point defects in Si. In general, diffusion research relies both on experimental methods to accurately determine diffusion profiles established under well-defined conditions. The analysis of diffusion profiles that can be based on either analytical or numerical solutions of the considered diffusion-reaction equations provides first information about possible diffusion mechanisms. To identify the mechanisms of diffusion, studies under different experimental conditions have to be performed. This chapter on diffusion in Si starts with an introduction on the significance of diffusion research in semiconductors to determine the properties of atomic defects. Diffusion in solids is treated from a phenomenological and atomistic point of view. Experiments designed to investigate the diffusion of self-and foreign atoms are presented and typical self-and foreign-atom profiles obtained after diffusion annealing under specific conditions are illustrated. The mathematical treatment of diffusion-reaction mechanisms is introduced to understand the shape of diffusion profiles and the meaning of the diffusion coefficient deduced from experiments. Modeling of self-, dopant-, and metal-atom diffusion is described that aims at a consistent interpretation of atomic transport processes in Si based on unified properties of the native point defects involved. Finally, till unsolved questions on the properties of point defects in bulk Si and on the diffusion behavior in threedimensional confined Si structures are addressed.

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Section: Experimental Diffusion Profilesmentioning

confidence: 86%