Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor

Abstract

In this paper, the effects of annealing temperature and other process parameters on spin-coated indium oxide thin film transistors (In2O3-TFTs) were studied. The research shows that plasma pretreatment of glass substrate can improve the hydrophilicity of glass substrate and stability of the spin-coating process. With Fourier transform infrared (FT-IR) and X-ray diffraction (XRD) analysis, it is found that In2O3 thin films prepared by the spin coating method are amorphous, and have little organic residue when the annealing temperature ranges from 200 to 300 °C. After optimizing process conditions with the spin-coated rotating speed of 4000 rpm and the annealing temperature of 275 °C, the performance of In2O3-TFTs is best (average mobility of 1.288 cm2·V−1·s−1, Ion/Ioff of 5.93 × 106, and SS of 0.84 V·dec−1). Finally, the stability of In2O3-TFTs prepared at different annealing temperatures was analyzed by energy band theory, and we identified that the elimination of residual hydroxyl groups was the key influencing factor. Our results provide a useful reference for high-performance metal oxide semiconductor TFTs prepared by the solution method.

Electronic influence of ultrathin aluminum oxide on the transistor device performance of binary indium/tin oxide films

“…1 Many devices such as active-matrix liquid-crystal displays (AMLCD) and active-matrix organic light-emitting diodes (AMOLED) rely on transistors exhibiting high mobilities, high optical transparency and low processing temperatures, as well as cost. 2,3 Materials comprising multinary heavy metal cations especially indium, zinc, and tin have been studied intensively for their application in TFTs. A variety of ternary and quaternary oxides, such as zinc tin oxide (ZTO), 4 indium zinc oxide (IZO), 5–7 and zinc indium tin oxide (ZITO) 8 have emerged as promising candidates.…”

“…A variety of ternary and quaternary oxides, such as zinc tin oxide (ZTO), 4 indium zinc oxide (IZO), 5–7 and zinc indium tin oxide (ZITO) 8 have emerged as promising candidates. Conventional fabrication methods for semiconducting materials include solution processing 2,3,9 and sputtering. 10,11 However, these methods suffer disadvantages such as uneven film thickness 2 or difficulties in controlling the elemental composition.…”

“…Conventional fabrication methods for semiconducting materials include solution processing 2,3,9 and sputtering. 10,11 However, these methods suffer disadvantages such as uneven film thickness 2 or difficulties in controlling the elemental composition. 12 Recently, the method of atomic layer deposition (ALD) has shown promising results for metal oxide TFTs with comparable performance parameters.…”

Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

“…Two papers [ 15 , 16 ] cover advanced processing techniques. The remaining papers [ 17 , 18 , 19 , 20 , 21 , 22 , 23 ] explore the properties and growth techniques of emerging WBG materials.…”

“…The effect of the annealing temperature on the microstructure and performance of sol-gel-prepared NiO films for electrochromic applications is analyzed by Shi et al in [ 17 ]. Solution-processed In 2 O 3 thin films and TFTs are fabricated, and the factors affecting the stability of these devices are investigated by Yao et al in [ 18 ]. The electronic structure and the optical properties of Sr-doped β-Ga 2 O 3 are studied by Kean Ping et al [ 20 ] using DFT first-principles calculations.…”