ZrHfO2-PMMA hybrid dielectric layers for high-performance all solution-processed In2O3-based TFTs

Rao, M.G. Syamala; Reddy, K. Chandra Sekhar; Meza-Arroyo, J.; Murthy, Lakshmi N.S.; Daunis, Trey B.; Pintor‐Monroy, Maria Isabel; Hsu, Julia; Ramı́rez-Bon, R.

doi:10.1016/j.materresbull.2022.111768

Cited by 4 publications

(3 citation statements)

References 52 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Moreover, the incorporation of MOx nanoparticles into the polymer matrix could lead to the formation of pinholes in the film and/or film cracking due to undesirable aggregation effects, preventing the dielectric thickness scaling. Hence, organic–inorganic hybrid dielectric materials have been prepared via the sol–gel process to overcome these limitations, providing ample potential for high-performance flexible electronics [ 19 , 20 , 21 ]. For example, Gheona et al [ 22 ] detailed the synthesis of a sol-gel-processed organic-inorganic hybrid incorporating phosphorus and zirconium.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Low-Temperature Solution-Processed High-κ Gate Dielectrics Using Organic–Inorganic TiO2 Hybrid Nanoparticles

Le,

Wang,

Hou

et al. 2024

Nanomaterials

View full text Add to dashboard Cite

Organic–inorganic hybrid dielectric nanomaterials are vital for OTFT applications due to their unique combination of organic dielectric and inorganic properties. Despite the challenges in preparing stable titania (TiO2) nanoparticles, we successfully synthesized colloidally stable organic–inorganic (O-I) TiO2 hybrid nanoparticles using an amphiphilic polymer as a stabilizer through a low-temperature sol–gel process. The resulting O-I TiO2 hybrid sols exhibited long-term stability and formed a high-quality dielectric layer with a high dielectric constant (κ) and minimal leakage current density. We also addressed the effect of the ethylene oxide chain within the hydrophilic segment of the amphiphilic polymer on the dielectric properties of the coating film derived from O-I TiO2 hybrid sols. Using the O-I TiO2 hybrid dielectric layer with excellent insulating properties enhanced the electrical performance of the gate dielectrics, including superior field-effect mobility and stable operation in OTFT devices. We believe that this study provides a reliable method for the preparation of O-I hybrid TiO2 dielectric materials designed to enhance the operational stability and electrical performance of OTFTs.

show abstract

Section: Introductionmentioning

confidence: 99%

Preparation of Low-Temperature Solution-Processed High-κ Gate Dielectrics Using Organic–Inorganic TiO2 Hybrid Nanoparticles

Le,

Wang,

Hou

et al. 2024

Nanomaterials

View full text Add to dashboard Cite

show abstract

“…The hybrid dielectric layers with optimized dielectric properties were successfully applied as gate dielectric layers for fabrication of TFTs with sputtered ZnO, a-IGZO and solution processed In 2 O 3 semiconductor layers, with reliable electrical switching properties at low operating voltages. [53][54][55][56][57] In this work, we mixed HfAlO x inorganic materials, with different amounts of hafnium, with crosslinked PVP polymers to obtain HfAlO x -PVP hybrid layers for gate dielectric applications in TFTs. The PVP dielectric polymer offers a higher dielectric constant, around 4-5, than other polymers, and that is why it is one of the organic dielectrics most widely employed in OTFTs.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

All solution-processed hafnium rich hybrid dielectrics for hysteresis free metal-oxide thin-film transistors

Meza-Arooyo¹,

Mullapudi²,

Ventura³

et al. 2023

J. Mater. Chem. C

Self Cite

View full text Add to dashboard Cite

show abstract

Tunable-performance all-oxide structure field-effect transistor based atomic layer deposited Hf-doped In2O3 thin films

Zhu,

Hu,

Chen

et al. 2023

The Journal of Chemical Physics

View full text Add to dashboard Cite

The relocation of peripheral transistors from the front-end-of-line (FEOL) to the back-end-of-line (BEOL) in fabrication processes is of significant interest, as it allows for the introduction of novel functionality in the BEOL while providing additional die area in the FEOL. Oxide semiconductor-based transistors serve as attractive candidates for BEOL. Within these categories, In2O3 material is particularly notable; nonetheless, the excessive intrinsic carrier concentration poses a limitation on its broader applicability. Herein, the deposition of Hf-doped In2O3 (IHO) films via atomic layer deposition for the first time demonstrates an effective method for tuning the intrinsic carrier concentration, where the doping concentration plays a critical role in determine the properties of IHO films and all-oxide structure transistors with Au-free process. The all-oxide transistors with In2O3: HfO2 ratio of 10:1 exhibited optimal electrical properties, including high on-current with 249 µA, field-effect mobility of 13.4 cm2 V−1 s−1, and on/off ratio exceeding 106, and also achieved excellent stability under long time positive bias stress and negative bias stress. These findings suggest that this study not only introduces a straightforward and efficient approach to improve the properties of In2O3 material and transistors, but as well paves the way for development of all-oxide transistors and their integration into BEOL technology.

show abstract

ZrHfO2-PMMA hybrid dielectric layers for high-performance all solution-processed In2O3-based TFTs

Cited by 4 publications

References 52 publications

Preparation of Low-Temperature Solution-Processed High-κ Gate Dielectrics Using Organic–Inorganic TiO2 Hybrid Nanoparticles

Preparation of Low-Temperature Solution-Processed High-κ Gate Dielectrics Using Organic–Inorganic TiO2 Hybrid Nanoparticles

All solution-processed hafnium rich hybrid dielectrics for hysteresis free metal-oxide thin-film transistors

Tunable-performance all-oxide structure field-effect transistor based atomic layer deposited Hf-doped In2O3 thin films

Contact Info

Product

Resources

About