Behavior of silicon-, sulfur-, and tellurium-relatedDXcenters in liquid-phase-epitaxy and vapor-phase-epitaxyGaAs1−x

Properties of DX center in Te-doped In1−xG axAsyP1−y/GaAs0.61 P/d0.39

“…The similar defect attributed to the residual S impurity is reported in LPE-and VPEgrown GaAs 1Ϫx P x . 13 Kwon et al 14 have reported that the deep trap in undoped In 0.5 Ga 0.5 P has the same properties as in S-doped In 0.5 Ga 0.5 P. Also, it has been reported that the S-DX center with E a of 0.319 eV exists in S-doped GaAs 0.605 P 0.395 grown by VPE. 15 Considering that the S atom is well known to be the residual impurity in LPE growth, it is suggested that the deep traps which are observed at higher temperature in Te-doped InGaAsP are related to the residual S impurities in the In or Ga melt.…”

Rapid Thermal Annealing Induced Deep Level Defects in Te-Doped GaAs

“…[1]. Te is intentionally added to achieve a high dopant concentration, necessary in fabricating solar cells, light emitting diodes and lasers [2,3]. However, it is well known that Te introduces DX-centers in all ternary and quaternary semiconductors [3,4].…”

Inexpensive circuit for the measurement of capture cross section of deep level defects in semiconductors

“…Such a diagram gives a helpful visualization of the electronphonon interaction, and can reveal lattice relaxations that occur on charge carrier capture. 3 One such example for large lattice relaxation ͑LLR͒ is the DX center observed in AlGaAs, 4 GaAsP, 5 and AlGaInP, 6 which exhibits persistent photoconductivity. Capture cross section is thus becoming one of the most important parameters to be determined in order to understand the physical nature of a defect.…”