Properties of DX center in Te-doped In1−xG axAsyP1−y/GaAs0.61 P/d0.39

Jeon, Byung‐Deuk; Kwon, Ho Ki; Choe, Byung‐Doo

doi:10.1063/1.117321

Cited by 2 publications

(1 citation statement)

References 9 publications

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“…Apart from the above-mentioned materials; there are different alloys composition exhibiting the effect with the variation in temperature. This also has been observed in quaternary alloy Ga 1−x In x N y As 1−y [119] at a temperature below 320 K. PPC has also been observed in various alloys like CdS 0.5 Se 0.5 [65], GaAsN [120], In x Al y Ga 1−x−y N quaternary alloys [121], Zn 0.02 Cd 0.98 Te [122], In x Ga 1−x As y P 1−y alloys [123], Cd 1−x Zn x Te [124] etc.…”

Section: Ppc In Alloysmentioning

confidence: 99%

A review on realizing the modern optoelectronic applications through persistent photoconductivity

Sumanth¹,

Ganapathi²,

Rao³

et al. 2022

J. Phys. D: Appl. Phys.

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Optoelectronic devices are becoming increasingly important due to their compatibility with CMOS fabrication technology and their superior performance in all dimensions compared to currently available devices. Numerous modern applications are formulated based on various aspects of optoelectronic materials and devices, such as artificial intelligence, optical memory, optoelectronic synapses, humanoid-photodetectors, holography, solar cells, charge storage devices, bio-electronic devices, and so on. Persistent photoconductivity (PPC), an optoelectronic phenomenon that has piqued the scientific community's interest, is a novel approach to these modern applications. In this article, we highlighted the use of PPC in a variety of emerging optoelectronic applications. PPC is a light-induced mechanism that persists after light excitation is terminated, i.e., the response does not stop immediately but remains available for a period of time. In recent years, the time duration over which the response after turning off the illumination is available has been proposed for a variety of applications. PPC has primarily been explored from a theoretical point of view, with the application component being largely ignored. Very recently, the scientific community has started exploring the possible applications pertaining to PPC such as optoelectronic synapses, holography, optical memory, bioelectronics, and artificial intelligence. Depending on the nature of the material and the type of model used in the application, a variety of mechanisms can be used to modulate the charge trapping and de-trapping methodologies for a specific application. This topical review summarizes the origins of PPC, its control mechanism, and recent advances in a variety of materials such as metal oxides, superconductors, nanofibers, 2D-semiconductors, alloys, nitrides, organic materials, topological insulators, and so on. In addition, the paper has carefully explored the development of next-generation optoelectronic applications designed for industry 4.0 leveraging the PPC phenomenon.

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Section: Ppc In Alloysmentioning

confidence: 99%

A review on realizing the modern optoelectronic applications through persistent photoconductivity

Sumanth¹,

Ganapathi²,

Rao³

et al. 2022

J. Phys. D: Appl. Phys.

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Current-induced persistent capacitance in Au/n-In0.08Ga0.92As0.51P0.49 Schottky contacts

Kwon

Kim

Lim

1998

Applied Physics Letters

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The zero-bias capacitance of a Schottky diode formed on a nominally undoped In0.08Ga0.92As0.51P0.49 is found to be persistently increased after a high current injection at low temperatures. The increment of capacitance grows as the amplitude or duration of the current pulse is increased. When a high current is injected at low temperatures before the deep level transient spectroscopy measurements, the concentration of the so-called ET1 defects is decreased. It is discussed that all these results are related to the hole injection from the Schottky contact and the charge-state controlled stability of the ET1 defects.

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Properties of DX center in Te-doped In1−xG axAsyP1−y/GaAs0.61 P/d0.39

Abstract: Articles you may be interested inHigh stability heterojunction bipolar transistors with carbondoped base grown by atomic layer chemical beam epitaxy J.Effect of stoichiometry on the dominant deep levels in liquid phase epitaxially grown ntype Al0.3Ga0.7As doped with Te

Cited by 2 publications

References 9 publications

A review on realizing the modern optoelectronic applications through persistent photoconductivity

A review on realizing the modern optoelectronic applications through persistent photoconductivity

Current-induced persistent capacitance in Au/n-In0.08Ga0.92As0.51P0.49 Schottky contacts

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