phys. stat. sol. (a)
 1998
DOI: 10.1002/(sici)1521-396x(199808)168:2<463::aid-pssa463>3.0.co;2-f
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Rapid Thermal Annealing Induced Deep Level Defects in Te-Doped GaAs

C. Vishnuvardhan Reddy
1
,
S. Fung
2
,
C. D. Beling
3
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