Annealing effects in InGaAsSb quantum wells with pentenary AlInGaAsSb barriers

Bugge, R.; Fimland, B. O.

doi:10.1088/0031-8949/2006/t126/004

Cited by 5 publications

(5 citation statements)

References 13 publications

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“…Today, up to five different semiconductors are mixed resulting in quinary alloys, e.g. (GaIn)(NAsSb) [1][2][3][4][5] or (AlInGa)(AsSb) [6][7][8]. In addition, modern growth techniques allow the production of very pure compounds which is essential for optical properties.…”

Section: Introductionmentioning

confidence: 99%

Anab initiobased approach to optical properties of semiconductor heterostructures

Bannow

Rosenow

Springer

et al. 2017

Modelling Simul. Mater. Sci. Eng.

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A procedure is presented that combines density functional theory computations of bulk semiconductor alloys with the semiconductor Bloch equations, in order to achieve an ab initio based prediction of the optical properties of semiconductor alloy heterostructures. The parameters of an eight-band k · p-Hamiltonian are fitted to the effective band structure of an appropriate alloy. The envelope function approach is applied to model the quantum well using the k · p-wave functions and eigenvalues as starting point for calculating the optical properties of the heterostructure. It is shown that Luttinger parameters derived from band structures computed with the TB09 density functional reproduce extrapolated values. The procedure is illustrated by computing the absorption spectra for a (AlGa)As/Ga(AsP)/(AlGa)As quantum well system with varying phosphide content in the active layer.An ab initio based approach to optical properties of semiconductor heterostructures 2 this purpose. Today, up to five different semiconductors are mixed resulting in quinary alloys, e.g. (GaIn)(NAsSb) [1,2,3,4,5] or (AlInGa)(AsSb) [6,7,8]. In addition, modern growth techniques allow the production of very pure compounds which is essential for optical properties. With this ever increasing number of available materials, it becomes increasingly important to predict the optical properties of new compounds to determine their usability for application in opto-electronic devices such as semiconductor lasers or solar cells.In this work, we present a method to calculate the optical properties of III-V heterostructures based on a first principles approach. For this purpose, the band structure of the semiconductor heterostructure is obtained within k · p-theory [9] and the envelope function approach [10] as described in section 2.2. However, this approach heavily depends on material parameters such as effective masses which ultimately need to be extracted from experiments. To cope with this issue, we use density functional theory (DFT) [11] to calculate the bulk band structures of each quantum well (QW) within the sample. To overcome the common shortcoming of DFT to underestimate the band gap of semiconductors [12], an advanced functional is used. A bulk k · p-band structure [9] is then fitted to its DFT counterpart. This approach results in a set of effective material parameters which are used to obtain the band structure of the QW sample within the envelope function approach.The resulting energy bands and wave functions from the k · p-calculation serve as starting point for the calculation of the optical properties. We calculate the absorption using the semiconductor Bloch approach [13] as outlined in section 2.4. The computation of other quantities such as the refractive index or photo luminescence is also possible within our microscopic approach. However, in this work we only aim at demonstrating the possibility of combining DFT and the semiconductor Bloch approach. Therefore, we chose a Ga(AsP) QW with (AlGa)As barriers, a well known III-V material s...

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Section: Introductionmentioning

confidence: 99%

Anab initiobased approach to optical properties of semiconductor heterostructures

Bannow

Rosenow

Springer

et al. 2017

Modelling Simul. Mater. Sci. Eng.

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“…[28] This might be the reason of decreased indium content in InGaAsSb/AlGaAsSb QW. [25] The blueshift in PL peak corresponds to indium interdiffusion in well layers to interface at barrier layers. A maximum blueshift of %7 meV was observed in InGaAsSb/AlGaAsSb QW annealed for 60 s at 350 C, as shown in the inset of Figure 1.…”

Section: Resultsmentioning

confidence: 99%

“…and optical properties of semiconductors; [21][22][23] therefore, the effects of annealing on interdiffusion and PL effects were investigated in InGaAsSb/AlGaAsSb structures. [24,25] Carrier heating in QWs under optical and current injection has been studied by Belenky and co-workers. [26,27] However, a phenomenon of carrier localization in quaternary InGaAsSb/AlGaAsSb MQWs, especially the effect of RTA, is rarely studied.…”

Section: Introductionmentioning

confidence: 99%

Effect of Rapid Thermal Annealing on the Emission Properties in InGaAsSb/AlGaAsSb Multiple Quantum Wells

Jia

Wang

Azad

et al. 2021

Physica Rapid Research Ltrs

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An effect of rapid thermal annealing (RTA) on emission properties of InGaAsSb/AlGaAsSb multiple quantum wells (MQWs) grown by molecular‐beam epitaxy is systematically investigated by photoluminescence (PL) spectra. The emission from free‐exciton and localized carriers is confirmed in as‐grown InGaAsSb/AlGaAsSb MQWs using temperature and excitation power‐dependent PL spectra. The results of RTA for different times at a fixed temperature of 350 °C are analyzed. The PL intensity of InGaAsSb/AlGaAsSb MQWs is increased after an RTA process, and the peak position is slightly blueshifted at 300 K. Low‐temperature PL spectra show improved emission of free‐exciton and deteriorated localized carriers recombination at an annealing time of 60 s. Double crystal X‐ray diffraction (DCXRD) measurements are also carried out to study the crystalline quality before and after annealing. These results indicate that a suitable RTA treatment is effective in reducing the densities of nonradiative recombination centers, which implies an improved optical property and crystalline quality of quantum well structures. This study provides valuable understanding of recombination processes and improvement of optical properties by RTA treatment in InGaAsSb/AlGaAsSb MQWs.

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“…Possibly, annealing at a temperature higher than the growth temperature could enhance the doping efficiency and hence increase carrier concentration [29]. However, Tedoped Al 0.9 Ga 0.1 As 0.06 Sb 0.94 is used as the cladding layer in mid-infrared lasers and annealing of lasers at high temperature is not preferred to avoid interdiffusion effects in the quantum wells and barriers and hence change in emitted wavelength [30,31]. Chiu et al [32] figure 5.…”

Section: Resultsmentioning

confidence: 99%

Dopant incorporation in Al 0.9 Ga 0.1 As 0.06 Sb 0.94 grown by molecular beam epitaxy

Patra

Tran

Vines

et al. 2017

Journal of Crystal Growth

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Incorporation of beryllium (Be) and tellurium (Te) dopants in epitaxially grown Al 0.9 Ga 0.1 As 0.06 Sb 0.94 layers was investigated. Carrier concentrations and mobilities of the doped layers were obtained from room temperature Hall effect measurements, and dopant densities from secondary ion mass spectrometry depth profiling. An undoped Al 0.3 Ga 0.7 As cap layer and side wall passivation were used to reduce oxidation and improve accuracy in Hall effect measurements. The measurements on Be-doped samples revealed high doping efficiency and the carrier concentration varied linearly with dopant density up to the highest

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Annealing effects in InGaAsSb quantum wells with pentenary AlInGaAsSb barriers

Cited by 5 publications

References 13 publications

Anab initiobased approach to optical properties of semiconductor heterostructures

Anab initiobased approach to optical properties of semiconductor heterostructures

Effect of Rapid Thermal Annealing on the Emission Properties in InGaAsSb/AlGaAsSb Multiple Quantum Wells

Dopant incorporation in Al 0.9 Ga 0.1 As 0.06 Sb 0.94 grown by molecular beam epitaxy

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