2006
DOI: 10.1088/0031-8949/2006/t126/004
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Annealing effects in InGaAsSb quantum wells with pentenary AlInGaAsSb barriers

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Cited by 5 publications
(5 citation statements)
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“…Today, up to five different semiconductors are mixed resulting in quinary alloys, e.g. (GaIn)(NAsSb) [1][2][3][4][5] or (AlInGa)(AsSb) [6][7][8]. In addition, modern growth techniques allow the production of very pure compounds which is essential for optical properties.…”
Section: Introductionmentioning
confidence: 99%
“…Today, up to five different semiconductors are mixed resulting in quinary alloys, e.g. (GaIn)(NAsSb) [1][2][3][4][5] or (AlInGa)(AsSb) [6][7][8]. In addition, modern growth techniques allow the production of very pure compounds which is essential for optical properties.…”
Section: Introductionmentioning
confidence: 99%
“…[28] This might be the reason of decreased indium content in InGaAsSb/AlGaAsSb QW. [25] The blueshift in PL peak corresponds to indium interdiffusion in well layers to interface at barrier layers. A maximum blueshift of %7 meV was observed in InGaAsSb/AlGaAsSb QW annealed for 60 s at 350 C, as shown in the inset of Figure 1.…”
Section: Resultsmentioning
confidence: 99%
“…and optical properties of semiconductors; [21][22][23] therefore, the effects of annealing on interdiffusion and PL effects were investigated in InGaAsSb/AlGaAsSb structures. [24,25] Carrier heating in QWs under optical and current injection has been studied by Belenky and co-workers. [26,27] However, a phenomenon of carrier localization in quaternary InGaAsSb/AlGaAsSb MQWs, especially the effect of RTA, is rarely studied.…”
Section: Introductionmentioning
confidence: 99%
“…Possibly, annealing at a temperature higher than the growth temperature could enhance the doping efficiency and hence increase carrier concentration [29]. However, Tedoped Al 0.9 Ga 0.1 As 0.06 Sb 0.94 is used as the cladding layer in mid-infrared lasers and annealing of lasers at high temperature is not preferred to avoid interdiffusion effects in the quantum wells and barriers and hence change in emitted wavelength [30,31]. Chiu et al [32] figure 5.…”
Section: Resultsmentioning
confidence: 99%