Behavior of electron-irradiation-induced defects in GaAs

Stiévenard, D.; Boddaert, X.; Bourgoin, J. C.; Bardeleben, H. J. von

doi:10.1103/physrevb.41.5271

Cited by 120 publications

(47 citation statements)

References 27 publications

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“…3 has a signature of E4 defect, 20 which is believed to be an As Ga ϩV As defect complex. 15 The small Pn4 peak at ϳ170 K has a trap signature similar to that of P1, 14 which must be a complex defect, because its concentration increases with the annealing temperature ͓see Figs. 1͑a͒ and 4͑a͔͒.…”

Section: Resultsmentioning

confidence: 98%

“…It is well accepted that creation of defect complexes is possible even during low dose electron irradiation. 15 DLTS spectra for proton irradiated p-type GaAs samples ͓Figs. 1͑b͒ and Fig.…”

Section: Resultsmentioning

confidence: 99%

“…11,12 Deep level transient spectroscopy ͑DLTS͒ measurements have been widely employed, 13,14 and their use has led to a fairly detailed model of many of the traps introduced into n-and p-type GaAs by electron irradiation. 15,16 The traps identified in proton irradiated GaAs 17 include most of those, found in electron irradiated materials, either after irradiation or after irradiation and annealing. Some of these traps, which have not been observed in electron irradiated GaAs, are associated with defects which are more complex than simple interstitial-vacancy pairs.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of deep level traps responsible for isolation of proton implanted GaAs

Boudinov

Coelho

Tan

et al. 2003

Journal of Applied Physics

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Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region ͑220-250°C͒ is similar to proton isolated GaAs below the threshold dose for complete isolation. At least four of the five traps observed in n-type GaAs are not simple interstitial-vacancy pairs. For p-type GaAs we have observed an unknown level with apparent energy of ϳ0.64 eV.

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Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Characterization of deep level traps responsible for isolation of proton implanted GaAs

Boudinov

Coelho

Tan

et al. 2003

Journal of Applied Physics

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“…Also, the E 0.38 has been attributed to close As vacancy-interstitial pairs, and its behavior is bound to the mobility of the arsenic interstitial after studying the introduction rate versus flux of electron irradiation and thermal annealing. 34,35 The E 0.17 defect is metastable and can be reversibly transformed by introducing zero and reverse bias anneals. 36 Finally, the E 0.63 can only be observed at relatively high radiation fluencies which implies that it might be a complex defect.…”

Section: A Electron Irradiation Induced Defectsmentioning

confidence: 99%

The fine structure of electron irradiation induced EL2-like defects in n-GaAs

Tunhuma

Auret

Legodi

et al. 2016

Journal of Applied Physics

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Defects induced by electron irradiation in n-GaAs have been studied using deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS). The E 0.83 (EL2) is the only defect observed prior to irradiation. Ru/n-GaAs Schottky diodes were irradiated with high energy electrons from a Sr-90 radionuclide up to a fluence of 2.45 Â 10 13 cm À2 . The prominent electron irradiation induced defects, E 0.04 , E 0.14 , E 0.38 , and E 0.63 , were observed together with the metastable E 0.17 . Using L-DLTS, we observed the fine structure of a broad base EL2-like defect peak. This was found to be made up of the E 0.75 , E 0.83 , and E 0.85 defects. Our study reveals that high energy electron irradiation increases the concentration of the E 0.83 defect and introduces a family of defects with electronic properties similar to those of the EL2. V C 2016 AIP Publishing LLC. [http://dx

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“…Point defects and their complexes determine optical and electrical properties of semiconductors, diffusion of impurities as well as the recovery of crystalline lattice after ion bombardment and subsequent annealing. Broad recovery stage at low temperatures exists for III-V semiconductor compounds [1][2][3][4]. It is located between 100 K and 400 K and is attributed to the recombination or reconfiguration of a variety of defects with different activation energy.…”

Section: Introductionmentioning

confidence: 99%

Defect Transformations in Ion Bombarded InGaAsP

et al. 2011

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Damage buildup and defect transformations at temperatures ranging from 15 K to 300 K in ion bombarded InGaAsP epitaxial layers on InP were studied by in situ Rutherford backscattering/channeling measurements using 1.4 MeV 4 He ions. Ion bombardment was performed using 150 keV N ions and 580 keV As ions to fluences ranging from 5 × 10 12 to 6 × 10 14 at./cm 2 . Damage distributions were determined using the McChasy Monte Carlo simulation code assuming that they consist of randomly displaced lattice atoms and extended defects producing bending of atomic planes. Steep damage buildup up to amorphisation with increasing ion fluence was observed. Defect production rate increases with the ion mass and decreases with the implantation temperature. Parameters of damage buildup were evaluated in the frame of the multi-step damage accumulation model. Following ion bombardment at 15 K defect transformations upon warming up to 300 K have also been studied. Defect migration beginning above 100 K was revealed leading to a broad defect recovery stage with the activation energy of 0.1 eV for randomly displaced atoms and 0.15 eV for bent channels defects.

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Behavior of electron-irradiation-induced defects in GaAs

Cited by 120 publications

References 27 publications

Characterization of deep level traps responsible for isolation of proton implanted GaAs

Characterization of deep level traps responsible for isolation of proton implanted GaAs

The fine structure of electron irradiation induced EL2-like defects in n-GaAs

Defect Transformations in Ion Bombarded InGaAsP

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