Introduction of the revolutionary drop-on-demand (DoD) inkjet printing technique for microelectronics allows the use of flexible substrate, organic and inorganic materials, and low-cost volume fabrication. However, inks of different functional materials for varieties of applications are still under development. Polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE), a potential candidate for mechanical and acoustic sensors, actuators, energy harvesting and nonvolatile memory applications, is a copolymer that exhibits piezo-, pyro-and ferro-electric properties. During this work, inkjetprinted films using high molecular weight PVDF-TrFE were developed and characterized to investigate their morphology and crystallinity. Modified waveform and very low jetting frequency have been used to accommodate relaxation time of the polymeric ink during jetting. Crystallographic studies confirm the presence of a β-phase, which exhibits spontaneous polarization per unit cell.

No abstract

In GaAs, electron irradiation is known to produce vacancy-interstitial pairs in the arsenic sublattice (VA, -As, ). The associated levels are electron traps (labeled E1-E5), and hole traps (labeled HO and H1). In addition, complexes (labeled H2-H5) involving the As; and residual impurities are created in p-type GaAs. This different behavior between nand p-type materials is found to be related to a difference in the mobility of As, during the irradiation. The existence of the various levels observed for the V&, -As, pair corresponds to a distribution in distance between V&, and As;. Most