Be and Mg co-doping in GaN

Kawaharazuka, Atsushi; Tanimoto, T.; Nagai, Keiji; Tanaka, Yasuhiro; Horíkoshi, Yoshiji

doi:10.1016/j.jcrysgro.2006.11.109

Cited by 7 publications

(3 citation statements)

References 20 publications

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“…Thus, the growth rate rapidly drops when the surface Ga coverage exceeds a certain critical value. In contrast, growth occurs despite the formation of Ga droplets on the surface when using radical nitrogen generated by RF-plasma [23][24][25][26], thus growth rate becomes constant. This difference indicates that radical nitrogen atoms generated by RF-plasma are energetically high.…”

Section: Resultsmentioning

confidence: 99%

Effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy

Kawaharazuka

Yoshizaki

Takato

et al. 2010

Phys. Status Solidi (c)

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We investigate the effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy (MBE) with ammonia as a nitrogen source. Control of the surface Ga condition is very important because the crystallization process strongly depends on the surface Ga coverage. The growth rate rapidly decreases when the supply of Ga exceeds certain amount when growing with ammonia, in contrast to the saturation grown with radio‐frequency plasma source. The critical Ga supply becomes higher by introducing the migration‐enhanced epitaxy (MEE). The growth rate is slightly higher for MEE compared with MBE in the region where it linearly increases with increasing the Ga supply. These phenomena can be explained by the model taking into account the surface coverage of the excess Ga, accumulation of Ga into droplet and diffusion of them during ammonia supply period. At elevated temperatures, surface Ga accumulation is less effective since Ga atoms can evaporate from the surface. The surface morphology becomes smoother by using MEE due to the quick Ga diffusion on the surface during the ammonia supply period. These results shows that MEE is very useful technique for the GaN growth with ammonia since the control of the surface Ga accumulation is very important (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 99%

Effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy

Kawaharazuka

Yoshizaki

Takato

et al. 2010

Phys. Status Solidi (c)

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“…By introducing the LT-ALN buffer, the FWHM of the DBX emission is reduced by half. In addition to the DBX recombination line, donor-acceptor pair (DAP) emissions and its phonon replica attributed to the Mg acceptor, which are typically observed Mg-doped p-type GaN [13][14][15], are observed from the sample directly grown on the MgO substrate. These Mg atoms probably diffuse into the GaN epitaxial layer from the MgO substrate because we do not intentionally dope them.…”

Section: Resultsmentioning

confidence: 99%

Effect of the MgO substrate on the growth of GaN

Suzuki

Kawaharazuka

Horíkoshi

2009

Journal of Crystal Growth

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“…[12] Besides, since Be atoms were theoretically predicted to act as shallower acceptors (E A = 100 meV), [13] Be-Mg codoping of GaN has also been investigated. [14,15] The strain caused by Be-doping is effectively compensated for by the introduction of Mg as codopant. In recent years, several groups have studied the codoping effects of Mg and In atoms.…”

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Hole Conduction Mechanism in In–Mg‐Codoped GaN Prepared via Pulsed Sputtering Deposition

Naito,

Ueno,

Kobayashi

et al. 2024

Physica Status Solidi (a)

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This study reports the pulsed sputtering deposition (PSD) epitaxial growth of In–Mg‐codoped GaN with a high hole concentration of 6.2 × 1018 cm−3 and its hole conduction mechanism. X‐ray diffraction analysis shows that In–Mg‐codoped GaN coherently grows on a GaN substrate without structural degradation and In concentration is 1.3%. Temperature‐dependent conductivity is explained by the combination of the band and nearest‐neighbor hopping conduction models. Curve fitting in the band conduction region is used to estimate the Mg activation energy, which is as low as 89 meV. This is responsible for the high hole concentration of 6.2 × 1018 cm−3. These results indicate that In–Mg codoping using low‐temperature PSD is a promising technique for the preparation of GaN with a high hole concentration without structural degradation.

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Be and Mg co-doping in GaN

Cited by 7 publications

References 20 publications

Effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy

Effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy

Effect of the MgO substrate on the growth of GaN

Hole Conduction Mechanism in In–Mg‐Codoped GaN Prepared via Pulsed Sputtering Deposition

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