Effect of the MgO substrate on the growth of GaN

Suzuki, Ryō; Kawaharazuka, Atsushi; Horíkoshi, Yoshiji

doi:10.1016/j.jcrysgro.2008.12.023

Cited by 11 publications

(5 citation statements)

References 15 publications

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“…However, 6H-SiC is more costly than Sapphire which is most favoured substrate for the growth of In x Ga 1-x N films as it possesses (i) hexagonal symmetry and exhibits stability at higher temperature upto1000°C (ii) a wide bandgap of about 9.9 eV that permits easily the photons of light from ultraviolet to near infrared spectrum allowing excellent optical transmission with a very scanty optical absorption 94 (iii) excellent resistance to abrasion (iv) excellent thermal shock properties (v) Mohs scale hardness of 9 in comparison to 10 for diamond 94 (vi) low cost (vii) easy availability for use. Wurtzite nitrides have been grown successfully on a, c, r, m-planes of Sapphire substrate, [95][96][97][98][99] MgO, 100,101 ZnO, 96 Si 102 and SiC. 96 The Silicon is a potential substrate for growing In x Ga 1-x N films due to its availability in large sizes at a very low cost.…”

Section: Challengesmentioning

confidence: 99%

Review—Recent Advances and Challenges in Indium Gallium Nitride (In_xGa_1-xN) Materials for Solid State Lighting

Kour¹,

Arya

Verma

et al. 2019

ECS J. Solid State Sci. Technol.

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In recent times, the demand for electrical energy is increased to such an extent that the scientific research has to be focused on the development of materials that fulfil the growing demands of energy for efficient solid state lighting purposes and provide clean and green energy to mitigate the alarming effects of climate change. The ternary Indium Gallium Nitride (In x Ga 1-x N) alloys have emerged as the potential candidate for Solid State lighting as they inherent such attributes that make them capable for these applications. In this review, the attributes of In x Ga 1-x N alloys have been discussed. The dependence of bandgap and bowing parameter on the composition of In x Ga 1-x N alloys along with various techniques employed for the growth of these alloys in bulk and nanostructure forms have been reviewed. The recent advances in In x Ga 1-x N based nanostructures for Solid State lighting have also been extensively reviewed. The challenges that are to be overcome for potential use of In x Ga 1-x N alloys like phase segregation, unavailability of a suitable substrate, polarization and doping have been thoroughly highlighted. In the end, the conclusion and future scope of work on these wonderful classes of materials has been drawn.

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Section: Challengesmentioning

confidence: 99%

Review—Recent Advances and Challenges in Indium Gallium Nitride (In_xGa_1-xN) Materials for Solid State Lighting

Kour¹,

Arya

Verma

et al. 2019

ECS J. Solid State Sci. Technol.

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“…In addition to the close lattice match, Al2O3 substrates are very stable, with no requirement for specific surface preparations. In contrast, MgO substrates require annealing to remove surface contamination 13 and are known to lack consistency in quality 14,15 .…”

Section: Introductionmentioning

confidence: 99%

Optimization of ruthenium as a buffer layer for non-collinear antiferromagnetic Mn3X films

Kurdi

Zilske

et al. 2020

Journal of Applied Physics

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Two thin film deposition routes were studied for the growth of high quality single crystalline Ru (0001) epitaxial films on c-Al2O3 substrates using RF-magnetron sputtering. Such films are very important as buffer layers for the deposition of epitaxial non-collinear antiferromagnetic Mn3X films. The first route involved depositing Ru at 700 °C, leading to a smooth 30 nm thick film. Although, high resolution X-ray diffraction (HRXRD) revealed twinned Ru film orientations, the in-situ post-annealing eliminated one orientation, leaving the film orientation aligned with the substrate, with no in-plane lattice rotation and a large lattice mismatch (13.6%). The second route involved deposition of Ru at room temperature followed by in-situ post-annealing at 700 °C. Transmission electron microscopy confirmed a very high quality of these films, free of crystal twinning, and a 30° in-plane lattice rotation relative to the substrate, resulting in a small in-plane lattice mismatch of -1.6%. X-ray reflectivity demonstrated smooth surfaces for films down to 7 nm thickness. 30 nm thick high quality single-crystalline Mn3Ga and Mn3Sn films were grown on top of the Ru buffer deposited using the second route as a first step to realize Mn3X films for antiferromagnetic spintronics applications.

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“…Thus, the growth rate rapidly drops when the surface Ga coverage exceeds a certain critical value. In contrast, growth occurs despite the formation of Ga droplets on the surface when using radical nitrogen generated by RF-plasma [23][24][25][26], thus growth rate becomes constant. This difference indicates that radical nitrogen atoms generated by RF-plasma are energetically high.…”

Section: Resultsmentioning

confidence: 99%

Effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy

Kawaharazuka

Yoshizaki

Takato

et al. 2010

Phys. Status Solidi (c)

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We investigate the effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy (MBE) with ammonia as a nitrogen source. Control of the surface Ga condition is very important because the crystallization process strongly depends on the surface Ga coverage. The growth rate rapidly decreases when the supply of Ga exceeds certain amount when growing with ammonia, in contrast to the saturation grown with radio‐frequency plasma source. The critical Ga supply becomes higher by introducing the migration‐enhanced epitaxy (MEE). The growth rate is slightly higher for MEE compared with MBE in the region where it linearly increases with increasing the Ga supply. These phenomena can be explained by the model taking into account the surface coverage of the excess Ga, accumulation of Ga into droplet and diffusion of them during ammonia supply period. At elevated temperatures, surface Ga accumulation is less effective since Ga atoms can evaporate from the surface. The surface morphology becomes smoother by using MEE due to the quick Ga diffusion on the surface during the ammonia supply period. These results shows that MEE is very useful technique for the GaN growth with ammonia since the control of the surface Ga accumulation is very important (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Effect of the MgO substrate on the growth of GaN

Cited by 11 publications

References 15 publications

Review—Recent Advances and Challenges in Indium Gallium Nitride (In_xGa_1-xN) Materials for Solid State Lighting

Review—Recent Advances and Challenges in Indium Gallium Nitride (In_xGa_1-xN) Materials for Solid State Lighting

Optimization of ruthenium as a buffer layer for non-collinear antiferromagnetic Mn3X films

Effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy

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Effect of the MgO substrate on the growth of GaN

Cited by 11 publications

References 15 publications

Review—Recent Advances and Challenges in Indium Gallium Nitride (InxGa1-xN) Materials for Solid State Lighting

Review—Recent Advances and Challenges in Indium Gallium Nitride (InxGa1-xN) Materials for Solid State Lighting

Optimization of ruthenium as a buffer layer for non-collinear antiferromagnetic Mn3X films

Effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy

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Product

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Review—Recent Advances and Challenges in Indium Gallium Nitride (In_xGa_1-xN) Materials for Solid State Lighting

Review—Recent Advances and Challenges in Indium Gallium Nitride (In_xGa_1-xN) Materials for Solid State Lighting