Surface migration is effectively enhanced by evaporating Ga or Al atoms onto a clean GaAs surface under an As-free or low As pressure atmosphere. This characteristic was utilized by alternately supplying Ga and/or Al and AS4
to the substrate surface for growing atomically-flat GaAs-AlGaAs heterointerfaces, and also for growing high-quality GaAs and AlGaAs layers at very low substrate temperatures. The migration characteristics of surface adatoms have been investigated through reflection high-energy electron diffraction measurements. It was found that different growth mechanisms are operative in this method at both high and low temperatures. Both these mechanisms are expected to yield flat heterojunction interfaces. By applying this method, GaAs layers and GaAs-AlGaAs single quantum-well structures with excellent photoluminescence were grown at substrate temperatures of 200 and 300degC, respectively.
When Ga or Al atoms are evaporated on a clean GaAs surface in an As-free atmosphere, they are quite mobile and migrate very rapidly along the surface even at low temperatures. This characteristic are utilized for growing high-quality GaAs and AlAs layers at very low temperatures by alternately supplying Ga or Al atoms and As4 molecules to the GaAs substrate. Applying this method, GaAs layers and AlAs–GaAs quantum well structures with reasonable photoluminescence characteristics are grown at 200°C and 300°C, respectively.
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