Background limited performance in p-doped GaAs/Ga0.71In0.29As0.39P0.61 quantum well infrared photodetectors

Abstract

Background limited infrared photodetection has been achieved up to 100 K at normal incidence with p-type GaAs/Ga0.71In0.29As0.39P0.61 quantum well intersubband photodetectors grown by low-pressure metalorganic chemical vapor deposition. Photoresponse covers the wavelength range from 2.5 μm up to 7 μm. The device shows photovoltaic response, the cutoff wavelength increases slightly with bias, and the responsivity increases nonlinearly with bias. These effects are attributed to an asymmetric quantum well profile.

III‐VCompound Semiconductor Optoelectronic Devices

“…Al free, GaAs/InGaAsP QWIPs have been investigated because this materials system also has higher mobility compared to GaAs/AlGaAs system, in addition to other advantages for Al free materials. p-type QWIPs with 50 periods of GaAs quantum wells with Ga 0.71 In 0.29 As 0.39 P 0.61 barriers have been demonstrated to operate in the range of 2.5 mmt o7 mm (180). However, growth of lattice matched quaternary barriers is challenging because of the presence of two volatile group V elements.…”