Devices

Stringfellow, G. B.

doi:10.1016/b978-012673842-1/50013-2

Cited by 2 publications

(6 citation statements)

References 136 publications

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“…Decreasing the pitch leads to a larger competition of the neighboring nanowires for the arriving growth species [ 71 , 75 ]. Surface temperature during growth [ 46 , 76 , 77 ] is one of the most complex parameters because it simultaneously influences the pyrolysis efficiencies in VPE techniques [ 45 ], surface diffusion for VS nanowires [ 46 ], binary and ternary interactions in the droplet for VLS nanowires [ 78 ], evaporation rates from the substrate surface or droplets [ 70 ], and attachment and detachment rates of a ternary island. The flux ratio of A to B atoms in vapor is the main control parameter that influences the composition of a ternary nanowire.…”

Section: Experimental Workmentioning

confidence: 99%

“…Surface temperature during growth [ 46 , 76 , 77 ] is one of the most complex parameters because it simultaneously influences the pyrolysis efficiencies in VPE techniques [ 45 ], surface diffusion for VS nanowires [ 46 ], binary and ternary interactions in the droplet for VLS nanowires [ 78 ], evaporation rates from the substrate surface or droplets [ 70 ], and attachment and detachment rates of a ternary island.…”

Section: Experimental Workmentioning

confidence: 99%

“…The chemical potentials of the AD and BD pairs in solids are given by

and

, respectively, with

and

as the chemical potentials of AD and BD solid binaries. The pseudo-binary interaction parameter

can be expressed through electronegativities and solubility parameters of pure components [ 45 ] or obtained by thermodynamic assessment using the CALPHAD method [ 109 ]. The values of the chemical potentials of pure liquids and solids, as well as the different interaction parameters used for calculations, are given in the Supporting Information (SI), Tables S1–S5 .…”

Section: Liquid–solid Incorporation Modelsmentioning

confidence: 99%

“…The equilibrium model based on Equations (9) and (10) has been extensively used for the description of VS growth [ 45 ]. As for III–V ternary nanowires, the model provided good fits to the experimental compositional profiles across axial GaAs/Al x Ga 1−x As/GaAs nanowire heterostructures [ 21 ].…”

Section: Liquid–solid Incorporation Modelsmentioning

confidence: 99%

“…Intermediate temperatures should correspond to the surface-transport-limited growth regimes, where surface diffusion of group III adatoms becomes very important. These limiting steps are well understood for thin films [ 45 ], but they should also be relevant for nanowires [ 46 , 47 ]. Different limiting steps of the mass transport mechanisms resulted in the development of different modeling approaches for ternary III–V nanowire compositions, which are based on different assumptions.…”

Section: Introductionmentioning

confidence: 99%

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An Overview of Modeling Approaches for Compositional Control in III–V Ternary Nanowires

Leshchenko

Dubrovskiı̆

2023

Nanomaterials

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Modeling of the growth process is required for the synthesis of III–V ternary nanowires with controllable composition. Consequently, new theoretical approaches for the description of epitaxial growth and the related chemical composition of III–V ternary nanowires based on group III or group V intermix were recently developed. In this review, we present and discuss existing modeling strategies for the stationary compositions of III–V ternary nanowires and try to systematize and link them in a general perspective. In particular, we divide the existing approaches into models that focus on the liquid–solid incorporation mechanisms in vapor–liquid–solid nanowires (equilibrium, nucleation-limited, and kinetic models treating the growth of solid from liquid) and models that provide the vapor–solid distributions (empirical, transport-limited, reaction-limited, and kinetic models treating the growth of solid from vapor). We describe the basic ideas underlying the existing models and analyze the similarities and differences between them, as well as the limitations and key factors influencing the stationary compositions of III–V nanowires versus the growth method. Overall, this review provides a basis for choosing a modeling approach that is most appropriate for a particular material system and epitaxy technique and that underlines the achieved level of the compositional modeling of III–V ternary nanowires and the remaining gaps that require further studies.

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Section: Experimental Workmentioning

confidence: 99%

Section: Experimental Workmentioning

confidence: 99%

“…The chemical potentials of the AD and BD pairs in solids are given by

and

, respectively, with

and

as the chemical potentials of AD and BD solid binaries. The pseudo-binary interaction parameter

Section: Liquid–solid Incorporation Modelsmentioning

confidence: 99%

Section: Liquid–solid Incorporation Modelsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

An Overview of Modeling Approaches for Compositional Control in III–V Ternary Nanowires

Leshchenko

Dubrovskiı̆

2023

Nanomaterials

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Advances in Two-Dimensional Magnetic Semiconductors via Substitutional Doping of Transition Metal Dichalcogenides

Cheng

Yang

2023

Materials

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Transition metal dichalcogenides (TMDs) are two-dimensional (2D) materials with remarkable electrical, optical, and chemical properties. One promising strategy to tailor the properties of TMDs is to create alloys through a dopant-induced modification. Dopants can introduce additional states within the bandgap of TMDs, leading to changes in their optical, electronic, and magnetic properties. This paper overviews chemical vapor deposition (CVD) methods to introduce dopants into TMD monolayers, and discusses the advantages, limitations, and their impacts on the structural, electrical, optical, and magnetic properties of substitutionally doped TMDs. The dopants in TMDs modify the density and type of carriers in the material, thereby influencing the optical properties of the materials. The magnetic moment and circular dichroism in magnetic TMDs are also strongly affected by doping, which enhances the magnetic signal in the material. Finally, we highlight the different doping-induced magnetic properties of TMDs, including superexchange-induced ferromagnetism and valley Zeeman shift. Overall, this review paper provides a comprehensive summary of magnetic TMDs synthesized via CVD, which can guide future research on doped TMDs for various applications, such as spintronics, optoelectronics, and magnetic memory devices.

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Devices

Cited by 2 publications

References 136 publications

An Overview of Modeling Approaches for Compositional Control in III–V Ternary Nanowires

An Overview of Modeling Approaches for Compositional Control in III–V Ternary Nanowires

Advances in Two-Dimensional Magnetic Semiconductors via Substitutional Doping of Transition Metal Dichalcogenides

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