Back contact passivation effects in Bi-facial thin CIGS solar cells

Edoff, Marika; Joel, Jonathan; Vermang, Bart; Hägglund, Carl

doi:10.1109/pvsc.2017.8366831

Cited by 1 publication

(2 citation statements)

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“…In order to investigate the effects and influence of back surface passivation in CIGS solar cells, there are studies that used bi-facial thin CIGS solar cells [28][29][30]. For bi-facial solar cells, all characterizations are made from both the front and back side of the solar cell.…”

Section: Approaches Used To Add the Passivation Layermentioning

confidence: 99%

“…For bi-facial solar cells, all characterizations are made from both the front and back side of the solar cell. In [30], atomic-layer-deposited Al 2 O 3 was used for surface passivation, and lift-off processed CdS NPs were used to create nano-sized contact openings in this layer. At the end of this study, it was concluded that passivated solar cells gave a higher external quantum efficiency (EQE) response, both when measured from the front and from the rear side, and there was a minor improvement in V oc values.…”

Section: Approaches Used To Add the Passivation Layermentioning

confidence: 99%

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Dielectric-Based Rear Surface Passivation Approaches for Cu(In,Ga)Se2 Solar Cells—A Review

et al. 2019

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This review summarizes all studies which used dielectric-based materials as a passivation layer at the rear surface of copper indium gallium (di)selenide, Cu(In,Ga)Se2, (CIGS)-based thin film solar cells, up to 2019. The results regarding the kind of dielectric materials, the deposition techniques, contacting approaches, the existence of additional treatments, and current–voltage characteristics (J–V) of passivated devices are emphasized by a detailed table. The techniques used to implement the passivation layer, the contacting approach for the realization of the current flow between rear contact and absorber layer, additional light management techniques if applicable, the solar simulator results, and further characterization techniques, i.e., external quantum efficiency (EQE) and photoluminescence (PL), are shared and discussed. Three graphs show the difference between the reference and passivated devices in terms of open-circuit voltage (Voc), short-circuit current (Jsc), and efficiency (η), with respect to the thicknesses of the absorber layer. The effects of the passivation layer at the rear surface are discussed based on these three graphs. Furthermore, an additional section is dedicated to the theoretical aspects of the passivation mechanism.

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Section: Approaches Used To Add the Passivation Layermentioning

confidence: 99%

Section: Approaches Used To Add the Passivation Layermentioning

confidence: 99%