Our system is currently under heavy load due to increased usage. We're actively working on upgrades to improve performance. Thank you for your patience.
1996
DOI: 10.1016/s0169-4332(96)00146-8
|View full text |Cite
|
Sign up to set email alerts
|

Atomistic study of the formation process of Ni silicide on the Si(111)-7×7 surface with scanning tunneling microscopy

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
11
0

Year Published

1998
1998
2023
2023

Publication Types

Select...
8
2

Relationship

0
10

Authors

Journals

citations
Cited by 21 publications
(12 citation statements)
references
References 12 publications
1
11
0
Order By: Relevance
“…This shows that the lattice structure is a ͑ p 7 3 p 7͒R 6 19.1 ± superstructure, whose period is 10.2 Å and consistent with the measured values of 10.3 6 0.4 Å. The ͑ p 7 3 p 7͒R 6 19.1 ± superstructure was reported to be observed with the adsorption of metals, Ag, Al, Co, Pt, and Ni, on Si(111) [21][22][23]. However, it is unlikely that the deposition caused contamination with these metals.…”
supporting
confidence: 86%
“…This shows that the lattice structure is a ͑ p 7 3 p 7͒R 6 19.1 ± superstructure, whose period is 10.2 Å and consistent with the measured values of 10.3 6 0.4 Å. The ͑ p 7 3 p 7͒R 6 19.1 ± superstructure was reported to be observed with the adsorption of metals, Ag, Al, Co, Pt, and Ni, on Si(111) [21][22][23]. However, it is unlikely that the deposition caused contamination with these metals.…”
supporting
confidence: 86%
“…2(c)). It is known that a regular packing of these RCs produces array with the ffiffiffiffiffi 19 p  ffiffiffiffiffi 19 p -R ± 23.4°periodicity, which might cover extended areas, as in the case of the Ni/Si(1 1 1) system [19][20][21]. However, our observations have shown that for the Fe/Si(1 1 1) system such ffiffiffiffiffi…”
Section: Disordered Region Formationmentioning
confidence: 52%
“…Several 2D phases are reported to appear during the reaction of an ultrathin Ni film with a Si (111) substrate, ( 3 3) 30 R ×°, ( 19 19) 23. 4 R ×°and (1 1) RC × − phases [13][14][15][16][17]. The last two phases are the most likely intermediate steps to epitaxial growth of 3D NiSi 2 onto Si (111) [18,19,20].…”
Section: Introductionmentioning
confidence: 99%