Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties

Kim, Jae Min; Nam, Taewook; Lim, Sung-Soo; Seol, Y. G.; Lee, Nae‐Eung; Kim, Doyoung; Kim, Hyungjun

doi:10.1063/1.3577607

Cited by 43 publications

(23 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Gadre et al used RF sputtering to achieve a-IGZO thin films on PEN at room temperature, which featured high transmittance and good performance after 6 h of oxygen-annealing followed by 6 h of vacuum-annealing [152]. Furthermore, a 130 nm thick Al 2 O 3 was deposited as a gate insulator by Kim et al employing an atomic layer deposition (ALD) method at a growth temperature (Ts) of 150 • C [81]. Bending tests were performed to investigate the change in device properties.…”

Section: Pen Flexible Substratesmentioning

confidence: 99%

See 1 more Smart Citation

Research Progress on Flexible Oxide-Based Thin Film Transistors

Zhang

Xiao

et al. 2019

Applied Sciences

View full text Add to dashboard Cite

Oxide semiconductors have drawn much attention in recent years due to their outstanding electrical performance, such as relatively high carrier mobility, good uniformity, low process temperature, optical transparency, low cost and especially flexibility. Flexible oxide-based thin film transistors (TFTs) are one of the hottest research topics for next-generation displays, radiofrequency identification (RFID) tags, sensors, and integrated circuits in the wearable field. The carrier transport mechanism of oxide semiconductor materials and typical device configurations of TFTs are firstly described in this invited review. Then, we describe the research progress on flexible oxide-based TFTs, including representative TFTs fabricated on different kinds of flexible substrates, the mechanical stress effect on TFTs and optimized methods to reduce this effect. Finally, an outlook for the future development of oxide-based TFTs is given.

show abstract

Section: Pen Flexible Substratesmentioning

confidence: 99%

“…Besides, integrated circuits containing oxide-based TFTs are gradually getting larger and replacing the silicon-based CMOS circuits. Examples are digital logic circuits, oscillation rings, and operational amplifiers [80][81][82][83][84][85][86][87][88][89][90][91][92][93][94][95].…”

Section: Introductionmentioning

confidence: 99%

Research Progress on Flexible Oxide-Based Thin Film Transistors

Zhang

Xiao

et al. 2019

Applied Sciences

View full text Add to dashboard Cite

show abstract

“…Other groups have demonstrated the capability of these systems to produce flexible circuits, 50 high-speed circuits, 43,51 and usefully display backplanes where the transparency of the ZnO TFT can be used to advantage. Our group has focused recently on methods to employ selective deposition to produce devices that can be patterned in processes similar to printing.…”

Section: Patterning and Circuitsmentioning

confidence: 99%

Thin-film electronics by atomic layer deposition

Levy¹,

Nelson²

2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Articles you may be interested inEffect of Al concentration on Al-doped ZnO channels fabricated by atomic-layer deposition for top-gate oxide thin-film transistor applications Low temperature atomic layer deposited Al-doped ZnO thin films and associated semiconducting properties High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO Atomic layer deposition (ALD) produces conformal films with low defects and a high degree of thickness control. Many applications leverage these properties to yield excellent dielectrics and barrier layers. In recent years, ALD has been exploited to produce thin-film transistors, in which the technique is capable of producing all of the layers required, including the semiconductor. This perspective will examine the state-of-the-art use of ALD to produce thin-film electronics, notably the zinc oxide-based thin-film transistor. It is critical that the ZnO-based semiconductor material have sufficiently high resistivity in order to yield transistors with low off current and good switching characteristics. The nature of this problem and the approaches used to address it will be discussed. The use of rapid deposition technologies, such as spatial ALD, also has a strong impact on the quality of the ZnO semiconductor. Finally, demonstrations of various thin film electronics devices and systems produced by ALD will be reviewed.

show abstract

“…Apparently, when the size of the material is reduced, the piezoelectric effect is still properly functional 6, 7. This piezoelectric nanomaterial can be single‐crystalline or polycrystalline both of which were reported to yield a reliable piezoelectric response 8, 9. Conventional lithography is incapable of producing nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Large‐Scale Nano Piezo Force Position Arrays as Ultrahigh‐Resolution Micro‐ and Nanoparticle Tracker

Subannajui¹,

Menzel²,

Güder³

et al. 2012

Adv Funct Materials

View full text Add to dashboard Cite

Defining the position of an object on a planar substrate by force sensors is a common technology nowadays. Many products are commercialized worldwide, which make use of force sensors, especially, for instance, touchpads. Here advanced lithography processes together with piezoelectric materials are demonstrated to fabricate an extremely high resolution force sensor. The approach combines a large array of nanoscale piezoelectric lines fabricated on Si wafer by phase‐shift lithography and atomic‐layer‐deposition‐based spacer lithography techniques. These key lithography methods are utilized to fabricate ultralong (cm range) nanolines on the wafer scale. ZnO and P(VDF‐TrFE) are selected here as materials for piezoelectric signal generators. The detection mechanisms are explained and simulations combined with experimental data are demonstrated to prove the concept. The signal generated when an object approaches one single line is in the nanoampere range. The result enables a new and simple path for a device fabrication, which defines the position with micro‐ and nanometer resolution and can be used, for example, as micro‐ and nanoparticle trackers.

show abstract

Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties

Cited by 43 publications

References 15 publications

Research Progress on Flexible Oxide-Based Thin Film Transistors

Research Progress on Flexible Oxide-Based Thin Film Transistors

Thin-film electronics by atomic layer deposition

Large‐Scale Nano Piezo Force Position Arrays as Ultrahigh‐Resolution Micro‐ and Nanoparticle Tracker

Contact Info

Product

Resources

About