2004
DOI: 10.1557/jmr.2004.0426
|View full text |Cite
|
Sign up to set email alerts
|

Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature

Abstract: The low limit of the deposition temperature for atomic layer deposition (ALD) of noble metals has been studied. Two approaches were taken; using pure oxygen instead of air and using a noble metal starting surface instead of Al2O3. Platinum thin films were obtained by ALD from MeCpPtMe3 and pure oxygen at deposition temperature as low as 200 °C, which is significantly lower than the low-temperature limit of300 °C previously reported for the platinum ALD process in which air was used as the oxygen source. The pl… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

3
177
1

Year Published

2006
2006
2022
2022

Publication Types

Select...
6
4

Relationship

0
10

Authors

Journals

citations
Cited by 158 publications
(181 citation statements)
references
References 25 publications
3
177
1
Order By: Relevance
“…[35][36] This change is expected given that the ALD Pt growth per cycle decreases with decreasing temperature. 37 We selected the 523K deposition temperature because it produced smaller particles with a narrower size distribution.…”
Section: Resultsmentioning
confidence: 99%
“…[35][36] This change is expected given that the ALD Pt growth per cycle decreases with decreasing temperature. 37 We selected the 523K deposition temperature because it produced smaller particles with a narrower size distribution.…”
Section: Resultsmentioning
confidence: 99%
“…The fact that the growth per cycle is reduced at lower substrate temperatures is not yet understood. 21 From surface science studies, it can be inferred that the dissociative chemisorption of O 2 ͓on Pt͑111͔͒ should not be the limiting factor. 12 On the other hand, the remote plasma ALD process which uses atomic oxygen from the gas phase has a higher growth rate than the thermal process at 200°C.…”
Section: Resultsmentioning
confidence: 99%
“…[34][35][36][37][38] Furthermore, the nature of the precursor ligands does not seem to have a large influence on the lower limit of the temperature window. For Ir ALD for example, high-quality films can be deposited for substrate temperatures above ∼220…”
Section: Discussionmentioning
confidence: 99%