Atomic layer deposition and characterization of stoichiometric erbium oxide thin dielectrics on Si(100) using (CpMe)3Er precursor and ozone

Abstract

Thin stoichiometric erbium oxide films were atomic layer deposited on p-type Si(100) substrates using tris(methylcyclopentadienyl)erbium and ozone. The film growth rate was found to be 0.12 ± 0.01 nm/cycle with an atomic layer deposition temperature window of 170-330 ºC. X-ray photoelectron spectral (XPS) analysis of the resulting Er 2 O 3 films indicated the as-deposited films to be stoichiometric with no evidence of carbon contamination. Studies of post deposition annealing effects on resulting films and interfaces were done using Fourier transforms infrared spectroscopy, XPS, glancing incidence X-ray diffraction, and optical surface profilometry.As-deposited Er 2 O 3 films were found to crystallize in the cubic structure with dominant (222) orientation; no erbium silicate was found at the interface. After annealing at 800 ºC in N 2 for 5 min, a new XPS feature was found and it was assigned to the formation of erbium silicate. As the annealing temperature was increased, the interfacial erbium silicate content was found to increase in the temperature range studied.

Evaluation of Radiation Sensor Aspects of $\text{Er}_2$$\text{O}_3$ MOS Capacitors under Zero Gate Bias

“…Moreover, up to an annealing temperature of 700 • C, erbium silicate was not observed by the XRD or FTIR analyses [27]. Similar to the data in the literature, any peak showing the formation of Si-O-Er bonds was not observed at approximately 900 cm −1 due to the relatively low annealing temperature [32], [34].…”

“…This IR spectrum was obtained by subtracting the reference spectra for p-Si (100). The spectrum includes the peaks between 400 and 600 cm −1 , which can be attributed to phonon bands of the crystallized Er 2 O 3 cubic phase [31], [32]. As seen in Fig.…”

“…The capacitance value in the strong accumulation region was measured as 7.52 × 10 −10 F, and the dielectric constant was calculated as 12.22, the value of which is given in the range of 9-14 in the literature [27], [32], [35]. …”

Structural and optical properties of lanthanide oxides grown by atomic layer deposition (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb)

“…Among the lanthanide oxides and precursors studied in this work, Nd 9 and Er 10 have previously 30 been investigated in the temperature range 200 -450 °C, Yb 11 at 250 -400 °C, while for Sm, Eu, Dy, Ho, Tm 8 , and Tb 12 only data at 300 °C are available. The use of alternative precursors has been investigated [13][14][15][16][17][18][19][20] . Ternary oxides and nanolaminates containing lanthanides have been deposited both by using the β- 35 diketonate chelates Ln(thd) 3 (Hthd = 2,2,6,6-tetramethyl-3,5-heptanedione) 9,12,[21][22][23][24][25][26] and alternative [27][28][29] precursors.…”

Cyclopentadienyl Precursors for the Atomic Layer Deposition of Erbium Oxide Thin Films

“…The study evaluating Er( t BuNC(CH 3 )N t Bu) 3 as an erbium precursor demonstrated that no ALD self‐limiting growth could be achieved, as the growth rate increased with increasing erbium precursor pulse length . On the other hand, Er(CpMe) 3 (Cp = cyclopentadienyl, ‐C 5 H 5 ‐ ), despite being also solid, offers significant improvement over Er( t BuNC(CH 3 )N t Bu) 3 and Er(thd) 3 , such as high reactivity toward both ozone and water, and a high growth rate typical for ALD rare‐earth oxide Cp‐based processes (>1 Å per cycle). It needs to be pointed out that such high growth rates have been observed when using both ozone and water as the oxygen source.…”