Electromagnetic (EM) absorbers play an increasingly essential role in the electronic information age, even toward the coming “intelligent era”. The remarkable merits of heterointerface engineering and its peculiar EM characteristics inject a fresh and infinite vitality for designing high‐efficiency and stimuli‐responsive EM absorbers. However, there still exist huge challenges in understanding and reinforcing these interface effects from the micro and macro perspectives. Herein, EM response mechanisms of interfacial effects are dissected in depth, and with a focus on advanced characterization as well as theoretical techniques. Then, the representative optimization strategies are systematically discussed with emphasis on component selection and structural design. More importantly, the most cutting‐edge smart EM functional devices based on heterointerface engineering are reported. Finally, current challenges and concrete suggestions are proposed, and future perspectives on this promising field are also predicted.
We present a method to quantify the spin Hall angle (SHA) with spin pumping and microwave photoresistance measurements. With this method, we separate the inverse spin Hall effect (ISHE) from other unwanted effects for permalloy/Pt bilayers using out-of-plane microwave excitation.Through microwave photoresistance measurements, the in-and out-of-plane precessing angles of the magnetization are determined and enabled for the exact determination of the injected pure spin current. This method is demonstrated with an almost perfect Lorentz line-shape for the obtained ISHE signal and the frequency independent SHA value as predicted by theory. By varying the Pt thickness, the SHA and spin-diffusion length of Pt is quantified as 0.012 0.001 ± and 8.3 0.9 ± nm, respectively.
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