Atmospheric Pressure Chemical Vapor Deposition of Titanium Nitride from Tetrakis (diethylamido) Titanium and Ammonia

Abstract

Titanium nitride (TiN) films were made from tetrakis (diethylamido) titanium (TDEAT) and ammonia by atmospher-. ic pressure chemical vapor deposition (APCVD). Growth rates, stoichiometries, and resistivities were studied as a function of temperature and ammonia: TDEAT ratios. Films were characterized by four-point probe, Rutherford backscattering, forward (elastic) recoil, and x-ray photoelectron spectroscopies. TDEAT was found to have a higher deposition

Chemical Vapor Deposition of Refractory Ternary Nitrides for Advanced Diffusion Barriers

“…The resistivity of TiN (no Si) grown from TDEAT and NH3 ranges from about 100 to 1000 cm. This spread is normal for this deposition chemistry, and reflects a range of TiN stoichiometrics (33). The addition of silicon to the films increases the resistivity exponentially, eventually exceeding 1 Q-cm at 25 at.% Si (not shown).…”

A comparative study of titanium nitride (TiN), titanium oxy nitride (TiON) and titanium aluminum nitride (TiAlN), as surface coatings for bio implants

“…In line with the existing literature [27], we can easily associate these components with TiO 2 , TiO x N y and TiN phases, respectively. The C1s peaks in the spectra (at 284.9 eV) may be the contribution from organic carbon which is unavoidable while using oil diffusion pump for evacuating the deposition chamber and XPS sample holding compartment [28]. Additionally, the Ar 2P peak identified in the spectra of the etched surface may be from the adsorbed argon during etching or Ar species incorporated into the films during growth [29].…”

RETRACTED ARTICLE: Structural and electrochemical impedance spectroscopic studies on reactive magnetron sputtered titanium oxynitride (TiON) thin films

“…The C 1s peaks in the spectra (at 284.9 eV) may be the contribution from organic carbon which is unavoidable while using oil diffusion pump for evacuating the deposition chamber and XPS sample holding compartment [24]. Further, carbon contamination might have occurred due to the air contamination when the films were transferred from the sputtering instrument to the XPS sample chamber.…”