We have used chemical vapor deposition to grow ternary tungsten-based diffusion barriers to determine if they exhibit properties similar to those of sputter-deposited ternaries. A range of different W-B-N compositions in a band of compositions roughly between 20 and 40% W were produced. The deposition temperature was low, 350"C, and the precursors used are well accepted by the industry. Deposition rates are high for a diffusion barrier application. Resistivities range from 200 to 2oooO pQ-cm, the films with the best barrier properties having -1000pQ-cm resistivities. Adhesion to oxides is sufficient to allow these films to be used as the adhesion layer in a tungsten chemical mechanical polishing plug application. The films are x-ray amorphous as-deposited and have crystallization temperatures of up to 900°C. Barrier performance against Cu has been tested using diode test structures. A composition of W.23B.49N.28 was able to prevent diode failure up to a 700°C, 30 minute anneal. These materials, deposited by CVD, display properties similar to those deposited by physical deposition techniques.
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