Titanium nitride (TiN) films were made from tetrakis (diethylamido) titanium (TDEAT) and ammonia by atmospher-. ic pressure chemical vapor deposition (APCVD). Growth rates, stoichiometries, and resistivities were studied as a function of temperature and ammonia: TDEAT ratios. Films were characterized by four-point probe, Rutherford backscattering, forward (elastic) recoil, and x-ray photoelectron spectroscopies. TDEAT was found to have a higher deposition
Near stoichiometric titanium nitride (TiN) was deposited from tetrakis(dimethylamido)titanium (TDMAT) and ammonia using atmospheric pressure chemical vapor deposition. Experiments were conducted in a belt furnace; static experiments provided kinetic data and continuous operation uniformly coated 150-mm substrates. Growth rate, stoichiometry, and resistivity are examined as functions of deposition temperature (190-420 ± C), ammonia flow relative to TDMAT (0-30), and total gas-flow rate (residence time 0.3 -0.6 s). Films were characterized by sheet resistance measurements, Rutherford Backscattering Spectrometry, and X-Ray Photoelectron Spectrometry. Films deposited without ammonia were substoichiometric (N͞Ti , 0.6 -0.75), contained high levels of carbon (C͞Ti 0.25-0.40) and oxygen (O͞Ti 0.6 -0.9), and grew slowly. Small amounts of ammonia (NH 3 ͞TDMAT > 1) brought impurity levels down to C͞Ti , 0.1 and O͞Ti 0.3 -0.5. Ammonia increased the growth rates by a factor of 4-12 at temperatures below 400 ± C. Films 500Å thick had resistivities as low as 1600 mV-cm when deposited at 280 ± C and 1500 mV-cm when deposited at 370 ± C. Scanning electron micrographs indicate a smooth surface and poor step coverage for films deposited with high ammonia concentrations.
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